Variable range hopping and/or phonon-assisted tunneling mechanism of electronic transport in polymers and carbon nanotubes

Pipinys, P.; Kiveris, A.

doi:10.2478/s11534-012-0005-3

Cited by 10 publications

(9 citation statements)

References 70 publications

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“…5a and 5b, respectively. The negatively source-drain biased I ds − T curve at +7V g (red curve) can be fitted by a phonon-assisted tunnelling model [38]:…”

Section: Resultsmentioning

confidence: 99%

“…4a, b , respectively. The negatively source–drain biased I ds – T curve at +7 V g (red curve) can be fitted by a phonon-assisted tunnelling model 38 : where , and Ω = (1 + γ 2 ) 1/2 , with α being a fitting parameter, E the electrical field strength, ε T the tunnel energetic depth, m * the electron effective mass, ħω the energy of the phonon taking part in the tunneling process, e and k B the element charge and Boltzmann’s constant, respectively. Using an effective mass of about 0.018 m e 39 , the best fit in the black solid line Fig.…”

Section: Discussionmentioning

confidence: 99%

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Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Fan

Liu

et al. 2017

Nat Commun

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Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.

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“…5a and 5b, respectively. The negatively source-drain biased I ds − T curve at +7V g (red curve) can be fitted by a phonon-assisted tunnelling model [38]:…”

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Fan

Liu

et al. 2017

Nat Commun

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“…In doped semiconductors, electronic conduction at low temperatures occurs through impurity states. In the case of heavily doped semiconductors, conduction occurs through the formation of an impurity band [ 25 , 26 ]. At low dopant concentrations, impurity states are localized and therefore electrons or holes migrate by hopping from occupied to unoccupied states with the assistance of phonons.…”

Section: Resultsmentioning

confidence: 99%

“…At low dopant concentrations, impurity states are localized and therefore electrons or holes migrate by hopping from occupied to unoccupied states with the assistance of phonons. This process is heavily dependent on thermal activation, and therefore at low temperatures there is a sharp decrease in electrical conductivity [ 23 , 25 , 26 ]. Accordingly, the Steinhart–Hart model is a good fit for the experimental data, particularly in the 250–400 °C range, below which there is considerable deviation from the measured data.…”

Section: Resultsmentioning

confidence: 99%

Boron Doped Diamond for Real-Time Wireless Cutting Temperature Monitoring of Diamond Coated Carbide Tools

et al. 2021

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Among the unique opportunities and developments that are currently being triggered by the fourth industrial revolution, developments in cutting tools have been following the trend of an ever more holistic control of manufacturing processes. Sustainable manufacturing is at the forefront of tools development, encompassing environmental, economic, and technological goals. The integrated use of sensors, data processing, and smart algorithms for fast optimization or real time adjustment of cutting processes can lead to a significant impact on productivity and energy uptake, as well as less usage of cutting fluids. Diamond is the material of choice for machining of non-ferrous alloys, composites, and ultrahard materials. While the extreme hardness, thermal conductivity, and wear resistance of CVD diamond coatings are well-known, these also exhibit highly auspicious sensing properties through doping with boron and other elements. The present study focuses on the thermal response of boron-doped diamond (BDD) coatings. BDD coatings have been shown to have a negative temperature coefficient (NTC). Several approaches have been adopted for monitoring cutting temperature, including thin film thermocouples and infrared thermography. Although these are good solutions, they can be costly and become impractical for certain finishing cutting operations, tool geometries such as rotary tools, as well as during material removal in intricate spaces. In the scope of this study, diamond/WC-Co substrates were coated with BDD by hot filament chemical vapor deposition (HFCVD). Scanning electron microscopy, Raman spectroscopy, and the van der Pauw method were used for morphological, structural, and electrical characterization, respectively. The thermal response of the thin diamond thermistors was characterized in the temperature interval of 20–400 °C. Compared to state-of-the-art temperature monitoring solutions, this is a one-step approach that improves the wear properties and heat dissipation of carbide tools while providing real-time and in-situ temperature monitoring.

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“…Therefore, the ES-VRH mechanism cannot be ignored. 15 Simultaneously, there occurs phonon-assisted carrier hopping in local states, 18,19 indicating that thermal activation is also one of the main mechanisms. When the Yb 3+ doping amount is large (x = 0.2), the carriers are mainly transported in the layered CeNbO 4 -rich phase.…”

Section: Electrical Propertiesmentioning

confidence: 99%

Nonlinear electrical behaviors and conductivity mechanisms in Ca_1‐_xYb_xCeNbWO₈ ceramics

2021

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In this study, we investigated the nonlinear electrical behaviors and conductivity mechanisms of Ca1‐xYbxCeNbWO8 ceramics, which are prepared by the solid‐state sintering method. CeO2 and CeNbO4 phases occur when the Yb3+ doping amount is greater than 0.1 in the CaCeNbWO8‐based ceramics. With the continuous incorporation of Yb3+, the grain size of the ceramics first decreases and then increases. The Ce3+ concentration in the ceramics decreases with increasing Yb3+ content. In the temperature range of 298.15 to 1073.15K, the relationship between ln ρ and 1000/T shows nonlinear electrical behaviors, which is attributed to the different conductivity mechanisms at high and low temperatures (ρ and T are resistivity and temperature, respectively). In the temperature range of 298.15 to 773.15K, the electrical conduction in Ca1‐xYbxCeNbWO8 ceramics follows the Efros‐Shklovskii variable‐range hopping (ES‐VRH) conduction mechanism, thermal activation conduction (x < 0.2), and two‐dimensional Mott VRH conduction mechanism (x = 0.2). Furthermore, the electrical conduction obeys the thermal activation conduction mechanism in the temperature range of 773.15 to 1073.15K. The activation energy for the electrical conduction is calculated based on the different hopping conduction mechanisms.

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Variable range hopping and/or phonon-assisted tunneling mechanism of electronic transport in polymers and carbon nanotubes

Cited by 10 publications

References 70 publications

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Boron Doped Diamond for Real-Time Wireless Cutting Temperature Monitoring of Diamond Coated Carbide Tools

Nonlinear electrical behaviors and conductivity mechanisms in Ca_1‐_xYb_xCeNbWO₈ ceramics

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Variable range hopping and/or phonon-assisted tunneling mechanism of electronic transport in polymers and carbon nanotubes

Cited by 10 publications

References 70 publications

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Boron Doped Diamond for Real-Time Wireless Cutting Temperature Monitoring of Diamond Coated Carbide Tools

Nonlinear electrical behaviors and conductivity mechanisms in Ca1‐xYbxCeNbWO8 ceramics

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Product

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Nonlinear electrical behaviors and conductivity mechanisms in Ca_1‐_xYb_xCeNbWO₈ ceramics