Variable Energy Gap in Oxygenated Amorphous Cadmium Telluride

Abstract

A new material, oxygenated amorphous cadmium telluride, is introduced into the II-VI semiconductor compounds family. Amorphous films of this material have been grown by a radio frequency sputtering deposition technique, using a controlled plasma (Ar-O-N) on glass slides substrates positively dc biased. We show that the bandgap of the films can be changed in a controlled way in the range from 1.48 to 2.02 eV depending on the amount of oxygen present in the sample.

Influence of minor oxidation of the precursor powders to form nanocrystalline CdTe by mechanical alloying

“…The nonlinear properties of these hetero-phase systems with nanocrystal aggregates are strongly affected by the average size and the size distribution of nanocrystals. Additionally, the CdTe oxide passivation may be tremendously helpful for optoelectronic device fabrication, similar to the role of SiO 2 in the Si technology [12,13].…”

Raman Scattering Study of H2O2-Etched Zn0.1Cd0.9Te Surfaces

“…sputtering deposition technique, have been found to show a wide variation in the range of 1.48 to 3.35 eV. 6 " Auger analysis of the oxygenated compound shows the existence of an amorphous ternary compound (CdTe) 1 -0O., The oxygenation of H 2 0 2 -etched ZCT surface, under ambient condition, with high laserirradiation power can be reasonably conceived. The N 2 from air could serve as a catalyst while 02 will provide necessary oxidation.…”

Electronic structure of crystalline binary and ternaryCd−Te−Ocompounds

“…sputtering, which have been extensively studied by optical spectroscopy, X-ray photoemission spectroscopy and Auger electron spectroscopy. 2,3,4,5,6,7,8,9,10,11,12,13 These alloys are transparent insulators whose optical gap can be tuned according to the content of oxygen between 1.5 and 4 eV, and can play a role in CdTe technology similar to that of SiO 2 in Si technology. Native oxides have also been identified on CdTe surfaces.…”