Abstract:We report the fabrication of a titanium oxide/carbon nanotube based field emission device suitable for nanolithography and fabrication of transistors. The growth of carbon nanotubes (CNTs) is performed on silicon substrates using a plasma-enhanced chemical vapor deposition method. The vertically grown CNTs are encapsulated by titanium oxide (TiO(2)) using an atmospheric pressure chemical vapor deposition system. Field emission from the CNTs is realized by mechanical polishing of the prepared structure. Possibl… Show more
What we present is fabrication of a novel Ti02/CNT based transistor. Vertically aligned CNTs have been grown on a silicon substrate. The CNTs were then encapsulated by Ti02 nanoparticles, which act as the gate material and are responsible for controlling the field emission current from CNTs.The field emitted electron beam can also be used for lithography, where the diameter of beam can be controlled by gate voltage.
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