Varactor‐tunable dual‐band filtering low‐noise amplifier

Abstract

Design and development of a tunable dual‐band filtering LNA has been presented in this paper. The center frequency of the lower band is continuously tuning with applied dc voltages. The center frequency of lower band has a tuning range of 2.0–2.5 GHz; while that of upper band is fixed at 5 GHz. Power consumption of our circuit is 28 mW. Overall size of proposed device is 0.96λg × 0.34λg, where λg is the guided wavelength at lower frequency. One ATF36163 GaAs HEMT is used as the active device in our circuit. Measured per stage gain of lower band is varying from 8 to 1.6 dB; while that of upper band is 5.4 dB. Measured noise figure of lower band is 2.4–3.4 dB; while that of upper band is 2.5 dB. Proposed filtering LNA has improved selectivity and spurious harmonic suppression with measured stopband attenuation of 45 dB. To author's knowledge, the investigation of tunable multiband and multifunctional device for highly improving the level of integration of the multiband RF front‐end design is reported for the first time.

Design of a multimode tunable low noise amplifier for software defined radios

“…The simulation and electromagnetic analysis is carried out in Keysight ADS. The LNA outperforms existing designs reported in [8, 10, 11]. Figs.…”

“…Additionally, varactor diodes were explored to achieve continuous frequency tuning in LNAs. In [8,9] varactor diodes were implemented in the output stage of LNA to achieve reconfiguration. However, the frequency tuning range in both circuits was limited to 500 MHz.…”

Design of RF Receiver Front end Subsystems with Low Noise Amplifier and Active Mixer for Intelligent Transportation Systems Application

“…A new approach for cost and risk assessment in the multi-objective selection of routes for the transport of hazardous materials (hazmat) on a network of city roads, The RF integrated circuits have drawn significant research attention due to the current trend toward compact, more power efficient RF front-ends, and exploitation of frequency reuse in commercial and military systems. In order to further reduce circuit size, space/volume of RF system, manufacturing cost etc, is reported in [31][32][33][34][35][36] .…”