Vapour phase epitaxial grown GaAs films with a very low deep level concentration

We have studied electrical properties and low‐temperature photoluminescence of n+‐layers produced by Si and Si+P ion implantation into undoped and indium‐doped liquid encapsulated Czochralski (LEC) grown GaAs semi‐insulating (SI) substrates. The effects of implant dosage are considered. It is shown that when compared to Si‐only implantation, the Si+P co‐implantation leads to suppression of the deep level defect formation in the anion sublattice, increasing the donor activation efficiency, and obtaining a sharper concentration profile of implanted atoms in both types of substrates. An additional improvement in radiation defect annealing can be obtained using indium‐doped GaAs matrix. However, no extra enhancement in donor activation efficiency due to In‐doping was observed.

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Formation of n+-Layers in Undoped and Indium-Doped GaAs Wafers by Si and Si+P Ion Implantation

Chaldyshev

Dymova

Kunitsyn

et al. 1997

phys. stat. sol. (a)

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Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates

et al. 1997

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Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs

et al. 1996

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We show that in contrast to Si donor and Be acceptor doping, isovalent In impurity doping enhances arsenic excess in the GaAs films grown by molecular beam epitaxy at low temperature. This effect is due to an increase in the concentration of arsenic antisite defects. Gallium vacancy related defects are detected only in the samples annealed at high temperature. Their concentration is found to be higher in the indium-free material than in the indium doped one.

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Vapour phase epitaxial grown GaAs films with a very low deep level concentration

Cited by 3 publications

References 6 publications

Formation of n+-Layers in Undoped and Indium-Doped GaAs Wafers by Si and Si+P Ion Implantation

Formation of n+-Layers in Undoped and Indium-Doped GaAs Wafers by Si and Si+P Ion Implantation

Silicon and phosphorus co-implantation into undoped and indium-doped GaAs substrates

Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs

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