Vapor Transport Growth of Wide Bandgap Materials

Bickermann, Matthias; Paskova, Tania

doi:10.1016/b978-0-444-63303-3.00016-x

Cited by 3 publications

(2 citation statements)

References 189 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The hexagonal line is observable after epitaxial growth. The large TSD at the spiral growth center in the growing ingot facet sometimes accompanies the hexagonal-line-shape high-doping regions [8]. The hexagonal line and TSD are little I-V deterioration of the pn-diode in the forward and the reverse bias mode (not shown here).…”

Section: Resultsmentioning

confidence: 71%

Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process

Torimi¹,

Yabuki²,

Sakaguchi³

et al. 2018

MSF

View full text Add to dashboard Cite

We investigate electrical characteristics of the pn-diode fabricated using the epitaxial films on the surface damage-free 4H-SiC (0001) Si-face 4° off-cut wafers prepared by the completely thermal-chemical etching process; Si-vapor etching (Si-VE) technology. The forward and reverse current-voltage (I-V) characteristics of pn-diodes correlated to the epitaxial defects are discussed. The device at the defect-free area includes 11 % failed diodes on the chemo-mechanical polishing (CMP) wafer while 0 % on the Si-VE wafer. The latent scratches and mechanical damages, which increase the forward and reverse leakage current of the pn-diodes, are completely removed by the Si-VE. The Si-VE exposes the carbon inclusions in the wafer to form the small bump which ends up with the larger bump defect on the epitaxial surface. These bumps cause leak current of the forward characteristics while all of the reverse characteristics are normal. The epitaxial film on the Si-VE surface has less density of the basal plane dislocations (BPDs) than the conventional CMP. It is hard to recognize the safe device on the CMP wafer without additional reliability test. The Si-VE wafer shows the apparent breakdown voltage fail on every small-number diode including BPDs under the simple test. It is considered that the Si-VE is possible to reduce ambiguity of the device characteristics under the relationship with the defects in comparison with the CMP.

show abstract

Section: Resultsmentioning

confidence: 71%

Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process

Torimi¹,

Yabuki²,

Sakaguchi³

et al. 2018

MSF

View full text Add to dashboard Cite

show abstract

“…Aiming to circumvent the polarity effect of the wurtzite GaN, using the so-called nonpolar planes for growth on and device active region aligned to, has been suggested. Both the 11 20 ð Þ, a-, and 1 100 ð Þ, m-, surface The growth along the [0001] polar direction was preferred and better controlled for long time, but recently different approaches have been proposed to accomplish growth along different crystallographic directions and polarity by hydride vapor phase epitaxy, 27 metalorganic chemical vapor deposition, 28 or molecular beam epitaxy. 29 The GaN surfaces with different crystallographic orientations and polarities have different chemical stabilities due to their different bond arrangements, which requires different material processing.…”

Section: B Dependence On Gan Surface Polarity and Qualitymentioning

confidence: 99%

A review of in situ surface functionalization of gallium nitride via beaker wet chemistry

et al. 2015

Self Cite

View full text Add to dashboard Cite

This review focuses on in situ functionalization of gallium nitride (GaN) with different adsorbates in the presence of an etchant. The low-temperature aqueous nature of this process provides a safe, environmentally friendly technique for tailoring the semiconductor's properties for various applications. Surface binding to GaN relies on a native oxide layer or direct attachment to the metal center present on the etched surface. The specifics of the binding mechanism are based on the functional groups present on the adsorbate. The effects of the GaN surface polarity and quality on the modification approach are analyzed. The review summarizes the alteration of GaN properties after the in situ treatment. Quantitative data until now have shown changes in morphological, surface chemical, optical, electronic, and aqueous stability properties. The review concludes with a short outlook on future studies associated with this surface modification approach.

show abstract

Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction

Sochacki

Sakowski

Kempisty

et al. 2021

Journal of Crystal Growth

View full text Add to dashboard Cite

Vapor Transport Growth of Wide Bandgap Materials

Cited by 3 publications

References 189 publications

Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process

Characterization of pn-Diode Fabricated from Surface Damage-Free 4H-SiC Wafer Using Si-Vapor Etching Process

A review of in situ surface functionalization of gallium nitride via beaker wet chemistry

Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction

Contact Info

Product

Resources

About