Vapor transport deposition of Sb₂Se₃ thin films for photodetector application

Abstract

Antimony selenide is a promising semiconductor with great application potential in the fields of optoelectronic devices. In this work, the vapor transport deposition (VTD) method is employed to prepare Sb2Se3 films on substrates. The influence of deposition temperature, distance between the Sb2Se3 sources and substrate, and the deposition holding time on the film morphology is investigated in detail. The deposited Sb2Se3 thin film is employed to fabricate photodetector with a structure of ITO/SnO2/Sb2Se3/Au, where the spin-coated SnO2 film is used as the buffer layer. The device demonstrates relative high responsivity in the range of 300–1000[Formula: see text]nm with a maximum value of 312[Formula: see text]mA W[Formula: see text] at 750[Formula: see text]nm.

Inheriting Sb2Se3 Nanorods on Sb2S3 Nanorod Arrays for Effective Light Harvesting and Charge Extraction in Solar Cells

“…As exhibited in Figure S5e­(i), the Sb 3d orbital as a coupled doublet was split into 3d 5/2 and 3d 3/2 . The Sb 3d 5/2 and Sb 3d 3/2 orbitals are the sum of the Sb–S bonds from Sb 2 Se 3 and Sb–O bonds from Sb 2 O 3 , , which can also be confirmed in the Sb 4d orbital. , It is worth noticing that the O 1s peak can be ascribed to the existence of a −OH group. ,,− …”

Tailoring the Sb2Se3/rGO Heterointerfaces for Modulation of Electrocatalytic Hydrogen Evolution Performances in Acidic Media

“…The XPS study was employed to determine chemical constituents of the samples and their chemical oxidation state. The deconvoluted core-level spectrum of Sb in Figure a displays Sb-3d 3/2 and Sb-3d 5/2 peaks at 537.9 and 528.6 eV, respectively, which indicates +3 oxidation state of the Sb element in Sb 2 Se 3 nanorods. − Moreover, oxide peaks appear at 539.3 and 529.7 eV owing to the surface oxidation of the hybrid sample, which are also accompanied by the core-level spectrum of O 1s (Figure S3). , However, in the XRD pattern and Raman spectrum analysis, no oxide peak is detected which indicates a small quantity of surface oxides.…”

“…54 However, there is no oxidation peak of Se (Se−O peak) which generally appears beyond 58 eV. 55 Importantly, in the Sb 2 Se 3 / rGO hybrid sample, the core-level spectra of Sb 3d and Se 3d 49 LSV measurements of the as-synthesized rGO, Sb 2 Se 3 , Sb 2 Se 3 /rGO, and commercially available standard Pt/C are carried out in 0.5 M H 2 SO 4 to compare the electrocatalytic HER performances. Cathodic polarization curves of corresponding samples are represented in Figure 6a, which depicts the variation of current density with the applied potential (after iR correction) in the reference scale of RHE.…”

“…Additionally, a small quantity of residual Se is detected at 55.5 eV in the Sb 2 Se 3 /rGO hybrid which might be correlated with surface oxidation of Sb species . However, there is no oxidation peak of Se (Se–O peak) which generally appears beyond 58 eV . Importantly, in the Sb 2 Se 3 /rGO hybrid sample, the core-level spectra of Sb 3d and Se 3d are shifted toward higher binding energy, indicating the increased oxidation state of Sb and Se, owing to the hybridization with the oxygen-functional group of rGO.…”

Comprehensive rear surface passivation of superstrate Sb2Se3 solar cells via post-deposition selenium annealing treatments and the application of an electron blocking layer

“…† The Sb 3d peak was deconvoluted into Sb-Se and Sb-O bonding at 529.6 and 530.9 eV, respectively. 31,32 The formation of SbO X is expected to occur when a Se-decient Sb 2 Se 3 lm is exposed to air and, therefore, the peak intensity of Sb-O bonding can indirectly indicate the degree of the Se deciency of the lm surface. The fact that the peak intensity of Sb-O decreased aer the PAT suggests that the surface became less decient in Se.…”