Vapor transport deposited tin monosulfide for thin-film solar cells: effect of deposition temperature and duration

Lee, Dajeong; Cho, Jae Yu; Yun, Hee-Sun; Lee, Doh‐Kwon; Kim, Tae-Hoon; Bang, Kijoon; Lee, Yun Seog; Kim, Ho-Young; Heo, Jaeyeong

doi:10.1039/c8ta09820d

Cited by 36 publications

(30 citation statements)

References 33 publications

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“…These larger grains do not allow for a uniform deposition of the buffer layers and top contact and thus promotes the formation of pinholes. As is reported elsewhere, 19 it is expected that these morphological features can assist in the formation shunt pathways, which can be further promoted aer hot plate annealing.…”

Section: Characterization Of A-sns and P-sns Solar Cellssupporting

confidence: 58%

“…All of these features result in higher recombination rates, device shunting or diminished light absorption. 18,19 In an attempt to mitigate some of these negative features, processes such as H 2 S annealing of lms have been trialed in order to increase grain size and lower grain boundary defects. Such procedures have been shown to control the hole concentration (3-5.7 Â 10 15 cm À3 ) in addition to increasing the charge carrier diffusion length.…”

Section: Introductionmentioning

confidence: 99%

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Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells

et al. 2019

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Section: Characterization Of A-sns and P-sns Solar Cellssupporting

confidence: 58%

Section: Introductionmentioning

confidence: 99%

Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells

et al. 2019

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“…The highest cell efficiency of 3.93% was achieved for a 1.2 μm thick SnS absorber deposited at an optimal growth temperature of 600 °C. 35 Further lowering the growth temperature to below 575 °C resulted in the formation of secondary phases, while at a higher growth temperature of 625 °C, a platelike morphology was obtained.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Temperature Ramping Rate on the Performance of Vapor Transport Deposited SnS Thin-Film Solar Cells

Lee

Cho

Nandi

et al. 2020

ACS Appl. Energy Mater.

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The effect of the temperature ramping rate of vapor transport deposition (VTD) on the morphology, crystallinity, and orientation of SnSabsorber layers and their impact on SnS/CdS heterojunction thin-film solar cells (TFSCs) has been investigated. The SnS-absorber layers were deposited on SLG/ Mo by using the VTD process at an evaporation temperature of 600 °C achieved by different temperature ramping rates ranging from 5 to 20 °C min −1 . The SnSabsorber layers deposited at a low temperature ramping rate of 5 °C min −1 displayed a nonuniform size distribution of crystallites with a (111) preferred orientation. An increase in the temperature ramping rate to 20 °C min −1 led to a densely packed morphology with pronounced (120)-oriented films and a more uniformly distributed grains. Furthermore, this improvement in the morphology and orientation of SnS absorbers resulted in a pronounced improvement in the diode characteristics of the heterojunction TFSC with device configuration of SLG/Mo/SnS/CdS/i-ZnO/Al-doped ZnO/Al, as revealed by current density−voltage analysis conducted under dark conditions. Consequently, the power conversion efficiency of the solar cells (active area = 0.3 cm 2 ) was increased to 3.98% together with an open-circuit voltage of 0.34 V, short-circuit current density of 20.16 mA cm −2 , and fill factor of 0.58 for the TFSC fabricated with the SnS-absorber layers deposited at an elevated temperature ramping rate of 20 °C min −1 compared with 2.45% for the absorber layer deposited at a ramping rate of 5 °C min −1 . The enhanced device performance was essentially attributed to the remarkably improved fill factor arising from the improved shunt properties of the SnS absorber.

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“…[ 34 ] Over the last few years, we have developed a strategy to prevent the formation of the plate‐like morphology of SnS thin films by controlling the Ar pressure in the VTD chamber, which eventually results in the formation of dense and compact structures. [ 35–37 ] Past experience in the growth of α‐SnS thin films via the VTD process and their application in TFSCs suggest that a similar approach could prevent the formation of the inherent layered structure and facilitate the growth of SnSe thin films comprising a compact morphology.…”

Section: Introductionmentioning

confidence: 99%

Vapor‐Transport‐Deposited Orthorhombic‐SnSe Thin Films: A Potential Cost‐Effective Absorber Material for Solar‐Cell Applications

et al. 2021

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The power‐conversion efficiencies of orthorhombic tin selenide (α‐SnSe)‐based thin‐film solar cells (TFSCs) are very low—less than 1% in most cases—due to the poor crystallinity, small grains, and large number of defects. Herein, the highest cell efficiency of 2.51% together with a high short‐circuit current density of 28.07 mA cm−2 for α‐SnSe TFSCs grown via vapor‐transport‐deposition (VTD) is reported. The grain size and surface roughness of the SnSe thin films greatly influence the shunt properties of the device. Significantly large shunt losses are detected in the case of both small and extremely large grains. The shunt losses for SnSe thin film with small grains are associated with high grain‐boundary scattering. The presence of extremely large grains results in high surface roughness of the SnSe thin film, which causes nonuniform deposition of the CdS buffer layer and, consequently, higher shunt losses. The SnSe thin film with moderate‐sized grains and inferior surface roughness exhibits improved shunt properties owing to uniform deposition of the CdS buffer layer and subsequent layers and thereby significant improvement in the device performance. The potential of orthorhombic VTD‐SnSe thin films as an emerging cost‐effective absorber layer for TFSCs is experimentally demonstrated.

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Vapor transport deposited tin monosulfide for thin-film solar cells: effect of deposition temperature and duration

Abstract: Proper control of the morphology and preferred orientation of the SnS absorber is crucial for increasing the open-circuit voltage of thin-film solar cells.

Cited by 36 publications

References 33 publications

Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells

Evaluation of AA-CVD deposited phase pure polymorphs of SnS for thin films solar cells

Influence of the Temperature Ramping Rate on the Performance of Vapor Transport Deposited SnS Thin-Film Solar Cells

Vapor‐Transport‐Deposited Orthorhombic‐SnSe Thin Films: A Potential Cost‐Effective Absorber Material for Solar‐Cell Applications

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