Vapor pressure of tantalum pentachloride

Brink, James M.; Stevenson, F. D.

doi:10.1021/je60053a016

Cited by 5 publications

(5 citation statements)

References 3 publications

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“…'All entries inTable 4were calculated with thc use of only[6] through[9]. The mean temperature is defined as the reciprocal of the mcan valuc of T-' for the reported data points.…”

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confidence: 99%

Vapour pressures of solid and liquid NbCl₅ and TaCl₅

Sadoway¹,

Flengas²

1976

Can. J. Chem.

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“…'All entries inTable 4were calculated with thc use of only[6] through[9]. The mean temperature is defined as the reciprocal of the mcan valuc of T-' for the reported data points.…”

mentioning

confidence: 99%

Vapour pressures of solid and liquid NbCl₅ and TaCl₅

Sadoway¹,

Flengas²

1976

Can. J. Chem.

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“…TaN etches slower than TiN, and this correlates with the lower vapor pressure of TaCl 5 (estimated as $10 À2 Torr, extrapolated from higher temperature to 333 K, the substrate temperature 24 ), relative to TiCl 4 [$60 Torr at 333 K (Ref. 25)].…”

Section: Resultsmentioning

confidence: 99%

Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

Shin

Zhu

Liu

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Articles you may be interested inDifferences in erosion mechanism and selectivity between Ti and TiN in fluorocarbon plasmas for dielectric etch Selectivity of etching between physical vapor-deposited TiN and TaN was studied in chlorinecontaining plasmas, under isotropic etching conditions. Etching rates for blanket films were measured in-situ using optical emission of the N 2 (C 3 P u !B 3 P g ) bandhead at 337 nm to determine the etching time, and transmission electron microscopy to determine the starting film thickness. The etching selectivity in Cl 2 /He or HCl/He plasmas was poor (<2:1). There was a window of very high selectivity of etching TiN over TaN by adding small amounts (<1%) of O 2 in the Cl 2 /He plasma. Reverse selectivity (10:1 of TaN etching over TiN) was observed when adding small amounts of O 2 to the HCl/He plasma. Results are explained on the basis of the volatility of plausible reaction products.

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“…In these experiments TaCl 5 was heated in a bubbler to a temperature of 160-165ºC, equivalent to a vapour pressure of 25-30 mmHg (16). Experiments were conducted in which a range of oxygen sources -water, methanol, ethanol and ethyl acetate -were mixed with the TaCl 5 vapour prior to entry to the reactor, but these experiments did not lead to any depositions.…”

Section: Resultsmentioning

confidence: 99%

“…Tantalum pentachloride is a high melting point solid (MP = 217ºC, BP = 233ºC), however an appreciable vapour pressure suitable for APCVD can be achieved at temperatures below the melting point. In these experiments TaCl 5 was heated in a bubbler to a temperature of 160-165ºC, equivalent to a vapour pressure of 25-30 mmHg (16). Experiments were conducted in which a range of oxygen sources -water, methanol, ethanol and ethyl acetate -were mixed with the TaCl 5 vapour prior to entry to the reactor, but these experiments did not lead to any depositions.…”

Section: Use Of Tantalum (V) Chloride As a Metal Sourcementioning

confidence: 99%

The Synthesis of Tantalum (V) Oxide Using Atmospheric Pressure Chemical Vapour Deposition for the Purposes of Photo-activated Water Splitting

et al. 2009

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This paper reports upon the deposition of tantalum (V) oxide thin films using dual source atmospheric pressure chemical vapour deposition. A range of precursors were used; Ta (V) chloride and tantalum (V) ethoxide as metal sources with water, ethanol and methanol, as oxygen sources. Optimum conditions were found in the reaction of tantalum (V) ethoxide and water, where a maximum growth rate of 553 nm min -1 was observed at 600ºC. Film depositions were carried out onto glass and metal coupons. The films on metal were tested for their ability to photo-oxidise water with a sacrificial electron acceptor under 254 nm light.

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Vapor pressure of tantalum pentachloride

Cited by 5 publications

References 3 publications

Vapour pressures of solid and liquid NbCl₅ and TaCl₅

Vapour pressures of solid and liquid NbCl₅ and TaCl₅

Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

The Synthesis of Tantalum (V) Oxide Using Atmospheric Pressure Chemical Vapour Deposition for the Purposes of Photo-activated Water Splitting

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Vapor pressure of tantalum pentachloride

Cited by 5 publications

References 3 publications

Vapour pressures of solid and liquid NbCl5 and TaCl5

Vapour pressures of solid and liquid NbCl5 and TaCl5

Selective etching of TiN over TaN and vice versa in chlorine-containing plasmas

The Synthesis of Tantalum (V) Oxide Using Atmospheric Pressure Chemical Vapour Deposition for the Purposes of Photo-activated Water Splitting

Contact Info

Product

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Vapour pressures of solid and liquid NbCl₅ and TaCl₅

Vapour pressures of solid and liquid NbCl₅ and TaCl₅