Vapor Pressure of Germanium Monosulfide

Shimazaki, Eiichi; Wada, Tsuguyasu

doi:10.1246/bcsj.29.294

Cited by 13 publications

(4 citation statements)

References 7 publications

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“…The latter ones were p r e p a r e d from high purity elements (99.999%) by annealing and subsequent sublimation of the products (5). Their crystallographic identity was established by x -r a y diffraction techniques, and lattice parameters agreed with literature values for GeS (7), GeSe (8), and GeTe (9). D e b y e -S c h e r r e r powder patterns of the two mixed compounds used in these experiments (systems A and B) confirmed the presence of a single phase with orthorhombic structure.…”

Section: Methodsmentioning

confidence: 63%

Morphology and Transport Rates of Mixed IV–VI Compounds in Micro‐Gravity

Wiedemeier

Sadeek

Klaessig

et al. 1977

J. Electrochem. Soc.

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The positive effects of micro‐gravity on crystal growth and basic properties of the vapor transport reaction were established by analyzing the results of three transport experiments of multicomponent systems performed during the Apollo‐Soyuz mission. The systems employed were GeSe0.99Te0.01‐GeI4 false(Afalse) , GeS0.98Se0.02‐GeCl4 false(Bfalse) , and normalGeS‐GeCl4‐normalAr false(Cfalse) . The crystallographic analysis is based on a direct comparison of space‐ and earth‐grown (prototype) crystals, employing x‐ray diffraction, microprobe, microscopic, and chemical etching techniques. The results demonstrate a considerable improvement of the space‐grown crystals in terms of chemical and crystalline homogeneity, surface morphology, and bulk perfection relative to earth specimens. The confirmation of greater mass transport rates than predicted for diffusion‐controlled transport in micro‐gravity suggests the existence of “thermochemically” induced convective motion in chemical vapor transport systems. The morphological observations indicate, that the presence of different convective components yields turbulence which adversely affects crystal quality as observed on earth. The internal consistency and agreement between our ASTP and Skylab results obtained for several compounds, transport agents, and temperature gradients strongly support the validity of these observations.

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Section: Methodsmentioning

confidence: 63%

Morphology and Transport Rates of Mixed IV–VI Compounds in Micro‐Gravity

Wiedemeier

Sadeek

Klaessig

et al. 1977

J. Electrochem. Soc.

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“…GeS. A number of workers (1,16,29,30,34) in recent years have measured the vapor pressure of GeS with fairly good agreement. The only large disagreement is that reported by Kenworthy, Starliper and Ollar, whose values appear to be too high.…”

Section: Resultsmentioning

confidence: 95%

Thermodynamic Properties of Solid Monoxides, Monosulfides, Monoselenides, and Monotellurides of Ge, Sn, and Pb.

Hirayama¹

1964

J. Chem. Eng. Data

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“…Notably, it is well established that SnS is lost during the annealing of CZTS thin films . In the case of CZGeS NCs this phenomenon would be exacerbated because the analogous germanium sulfide species is expected to be more prone to volatilization due to its relatively high vapor pressure and lower dissociation energy. , …”

Section: Results and Discussionmentioning

confidence: 99%

“…97 In the case of CZGeS NCs this phenomenon would be exacerbated because the analogous germanium sulfide species is expected to be more prone to volatilization due to its relatively high vapor pressure and lower dissociation energy. 98,99 Optical and Electronic Characterization of Thin Films. To study how the structural and compositional changes stemming from alloying the thin films governs their optical properties, transmission and reflectance measurements were conducted using an integrating sphere.…”

Section: Chemistry Of Materialsmentioning

confidence: 99%

Cu₂ZnGeS₄ Nanocrystals from Air-Stable Precursors for Sintered Thin Film Alloys

et al. 2014

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The synthesis of an air and moisture stable germanium complex and its use in the synthesis of ternary and quaternary copper containing nanocrystals (NCs) is described. Through the use of 1 H-/ 13 C nuclear magnetic resonance and Fourier transform infrared spectroscopies, thermogravimetric analysis, and powder X-ray diffraction, the speciation and chemistry of this precursor is elucidated. This germanium source is employed in the gram scale, noninjection synthesis of Cu 2 ZnGeS 4 (CZGeS) and Cu 2 GeS 3 (CGeS) NCs using a binary sulfide precursor approach. To demonstrate the versatility of such NCs for fabricating thin films suitable for high-efficiency optoelectronic devices, they are blended with Cu 2 ZnSnS 4 (CZTS) NCs and selenized to form homogeneously alloyed Cu 2 ZnSn x Ge 1−x S y Se 4−y (CZTGeSSe) thin films. The structural, optical, and electronic properties of such thin films are studied using X-ray diffraction, scanning electron microscopy, UV−vis−NIR spectroscopy, and photoelectron spectroscopy in air. These measurements demonstrate collectively that incorporating Ge into micrometer-sized, tetragonal Cu 2 ZnSnS x Se 4−x (CZTSSe) provides a facile manner in which the conduction band energy can be readily tuned. The strategy developed herein provides a pathway to controlled levels of Ge incorporation in a single step process, thus avoiding the need for intra-alloyed Cu 2 ZnSn x Ge 1−x S 4 nanocrystals.

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Vapor Pressure of Germanium Monosulfide

Cited by 13 publications

References 7 publications

Morphology and Transport Rates of Mixed IV–VI Compounds in Micro‐Gravity

Morphology and Transport Rates of Mixed IV–VI Compounds in Micro‐Gravity

Thermodynamic Properties of Solid Monoxides, Monosulfides, Monoselenides, and Monotellurides of Ge, Sn, and Pb.

Cu₂ZnGeS₄ Nanocrystals from Air-Stable Precursors for Sintered Thin Film Alloys

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Vapor Pressure of Germanium Monosulfide

Cited by 13 publications

References 7 publications

Morphology and Transport Rates of Mixed IV–VI Compounds in Micro‐Gravity

Morphology and Transport Rates of Mixed IV–VI Compounds in Micro‐Gravity

Thermodynamic Properties of Solid Monoxides, Monosulfides, Monoselenides, and Monotellurides of Ge, Sn, and Pb.

Cu2ZnGeS4 Nanocrystals from Air-Stable Precursors for Sintered Thin Film Alloys

Contact Info

Product

Resources

About

Cu₂ZnGeS₄ Nanocrystals from Air-Stable Precursors for Sintered Thin Film Alloys