Vapor-Phase Growth of Single Crystals of II–VI Compounds

Piper, W. W.; Polich, S. J.

doi:10.1063/1.1736219

Cited by 257 publications

(32 citation statements)

References 6 publications

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“…Reduction of the rate of crystal growth as growth proceeds is a known phenomenon. For example, in conventional vapour growth methods like the Piper-Polich [49] and the Markov-Davydov [50] this self-limiting behaviour is attributed to the fact that the growth front is located at the hottest part of the crystal and is therefore bottle-necked by the heat transfer through the volume of the material being grown (which is determined by its thermal conduction properties) [47]. When RT > ΔG ≠ and under longitudinally isothermal conditions, a dynamic equilibrium tend to be established, where the rate of crystallization equals the rate of decomposition.…”

Section: Discussionmentioning

confidence: 99%

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

Colombara

Delsante

Borzone

et al. 2013

Journal of Crystal Growth

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Single crystals of Cu 2 ZnSnS 4 have been produced within sealed quartz ampoules via the chemical vapour transport technique using I 2 as the transporting agent. The effects of temperature gradient and I 2 load on the crystal habit and composition are considered. Crystals have been analysed with XRD, SEM, and TEM for compositional and structural uniformities at both microscopic and nanoscopic levels. The synthesized crystals have suitable (I 2 -load dependent) properties and are useful for further solar absorber structural and physical characterizations. A new chemical vapour transport method based on longitudinally isothermal treatments is attempted. Based on a proposed simplistic mechanism of crystal growth, conditions for crystal enlargement with the new method are envisaged.

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Section: Discussionmentioning

confidence: 99%

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

Colombara

Delsante

Borzone

et al. 2013

Journal of Crystal Growth

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“…For instance, when a mixture of anthracene and CuPc was heated, the anthracene melt dissolved the CuPc [309], and after slowly reducing the melt temperature, black needle-shaped crystals were separated from the solid anthracene by adding toluene [344].…”

Section: Solution-grown Os Crystalsmentioning

confidence: 99%

Organic semiconductors for device applications: current trends and future prospects

Ahmad

2014

Journal of Polymer Engineering

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Abstract:With the rich experience of developing silicon devices over a period of the last six decades, it is easy to assess the suitability of a new material for device applications by examining charge carrier injection, transport, and extraction across a practically realizable architecture; surface passivation; and packaging and reliability issues besides the feasibility of preparing mechanically robust wafer/substrate of single-crystal or polycrystalline/ amorphous thin films. For material preparation, parameters such as purification of constituent materials, crystal growth, and thin-film deposition with minimum defects/ disorders are equally important. Further, it is relevant to know whether conventional semiconductor processes, already known, would be useable directly or would require completely new technologies. Having found a likely candidate after such a screening, it would be necessary to identify a specific area of application against an existing list of materials available with special reference to cost reduction considerations in large-scale production. Various families of organic semiconductors are reviewed here, especially with the objective of using them in niche areas of large-area electronic displays, flexible organic electronics, and organic photovoltaic solar cells. While doing so, it appears feasible to improve mobility and stability by adjusting π-conjugation and modifying the energy bandgap. Higher conductivity nanocomposites, formed by blending with chemically conjugated C-allotropes and metal nanoparticles, open exciting methods of designing flexible contact/interconnects for organic and flexible electronics as can be seen from the discussion included here.

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“…Usually the rate of the crystal growth is below 10 mm per day. 26 in the first paper on the PVT technique. The process of crystallization proceeded in a closed horizontal quartz ampoule with a conical tip at the colder end.…”

Section: Physical Vapour Transportmentioning

confidence: 99%

<title>Very high quality crystals of wide-gap II-VI semiconductors: What for?</title>

Mycielski¹,

Szadkowski²,

Kaliszek³

et al. 2001

SPIE Proceedings

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A review of some of the most important applications of the wide-gap II-VI semiconductors is presented, the key parameters of the crystals for specific applications are emphasized, and the necessity of growing crystals of very high quality is substantiated. Modem methods of growth of high-quality wide-gap II-VI semiconductor crystals are shortly described. The results of the physical vapor transport method, chosen by the authors for ZnTe and CdZnTe crystals, are shown.Keywords: wide-gap II-VI semiconductors; high-quality crystals; applications of II-VI semiconductors; technology of semiconductor crystals INTRODUCTIONThe physics of the wide-gap 1I-VI semiconductors has been developing during last fifty years, but technical applications are spreading fast only recently. The development of applications is determined by the progress in the technology of crystals. In this review we are going to show why in many applications of the semiconductor crystals the wide-gap II-VI semiconductor crystals are the best choice and that numerous applications require very high quality crystals. The quality requirements for particular applications will be emphasized. Finally, the leading technologies, which enable the growth of very high quality wide-gap II-VI semiconductor crystals, will be discussed with special attention payed to the technology chosen by the authors. Among important applications of the wide-gap 1I-VI semiconductor crystals one can name:

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Vapor-Phase Growth of Single Crystals of II–VI Compounds

Abstract: A method of growing doped single crystals of II–VI compounds a few cm3 in size is described. The crystal is grown from the vapor phase in a closed moving crucible which permits an efficient utilization of the charge and flexibility in the dimensions of the crystal.

Cited by 257 publications

References 6 publications

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

Crystal growth of Cu2ZnSnS4 solar cell absorber by chemical vapor transport with I2

Organic semiconductors for device applications: current trends and future prospects

<title>Very high quality crystals of wide-gap II-VI semiconductors: What for?</title>

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