“…However, past attempts at vapour growth have been frustrated by the inability to control independently the source and seed temperatures, and the transport rate. We have successfully grown CdTe [14] and CZT crystals [15,11] up to 100mm diameter on GaAs substrates, using a multi-tube physical vapour transport (MTPVT) technique [16,17]. The key feature of the growth system is that the temperatures of source and seed are thermally decoupled by use of independent vertical furnaces which are parallel, separated horizontally and interconnected by a horizontal, heated, transport tube to avoid any line of sight, and thus radiative thermal coupling, between source and seed.…”