Vapor Phase Etching of GaAs in the H[sub 2]-H[sub 2]O Flow System

Abstract

The normalGaAs‐H2O‐H2 etch reaction has been studied as a function of flow rate, temperature, and normalGaAs surface area. Experimental and calculated equilibrium constants for the reaction have been compared. The formation of Ga2O3false(normalsfalse) is considered. The variation of sample surface texture with gas composition is examined.

Proposal of quasi thermal equilibrium model for etching phenomenon by gases: Example of the etching of 4H-SiC by H2

“…In semiconductor device fabrication, etching by using gases has been applied in various processes, e.g., the mask pattern formation by selective etching and the wafer surface cleaning before epitaxial growth. [1][2][3][4][5][6][7][8] The etching rate is one of the most important factors to be controlled in these processes. The etching rate generally depends on the process parameters such as the temperature, the flow rate of etching gases, and the pressure.…”

An introduction to semiconductor surfaces as catalysts

“…The. control and possible elimination of such oxide films on semiconductor surfaces may be achieved by chemical gas phase in situ etching (23,24) immediately prior to a catalytic reaction taking place. Oxide films give rise to "fast" and "slow" surface states depending on whether the location of the surface state is at the semiconductor-oxide interface or in the the bulk of the oxide, respectively.…”