Vapor phase epitaxy of Hg1−xCdxI2 on sapphire

Effect of reactive ion beam etching on the photoluminescence of CdTe epitaxial layers

“…4,5 In spite of these problems, reasonable optical and structural quality can be obtained in CdTe epilayers grown onto sapphire substrates, even if the accumulated stress on the interface can produce an important surface roughness. [6][7][8] For technological applications of CdTe epilayers, it is necessary to develop several processes that affect their surfaces, particularly reactive ion beam etching ͑RIBE͒. This process is a typical one to produce pixels and photonic bandgap structures onto semiconductors and other particular photonic and optoelectronic devices.…”

“…These pairs can be due to the group I residual impurities and their complexes with cadmium vacancies, which are common in bulk and epitaxial layers of CdTe. [1][2][3][4][5][6][7][8]13,14 All the recombination features described above are common for both types of zones at the CdTe surface, with and without RIBE attack. The main differences are the emission intensity and the better definition of the PL resonances in the zones without RIBE attack.…”

Combined photoluminescence study of substrate defects in Hg1−xCdxI2/CdTe heterostructures

“…Hg 1Àx Cd x I 2 and CdTe, could be beneficial for a detector operation. In these structures, an average Z number and thickness and bandgap can be easily modified and a low-temperature vapor growth on different substrates is available [11][12][13][14][15][16].…”

“…1b, shows the Hg 1Àx Cd x I 2 layer (I), the specific polycrystalline area (II) related to the VPE growth kinetics and a sharp layer/substrate interface. More details on the Hg 1Àx Cd x I 2 layer structure in dependence on the VPE growth conditions could be found elsewhere [6,12,15,16]. 2 shows the PL spectra of CdTe substrate, which were measured on its cleaved cross-section (a, b) and surface through the Hg 1Àx Cd x I 2 layer (c).…”