Vapor Phase Epitaxy of AlGaN Base Layers on Sapphire Substrates for Nitride-Based UV-Light Emitters

High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

“…27) The excellent crystalline quality paves the way for realizing high-efficiency UVA-LEDs on Si substrates, as it has been reported that the TDD must be below 5 × 10 8 cm −2 to obtain an IQE of above 50% on the basis of the results of simulation and experimental studies. 28,29) On top of the high-quality Si-doped Al 0.05 Ga 0.95 N thick layer, the InGaN=AlGaN superlattice layers were overgrown, followed by the growth of five pairs of MQWs. The InGaN= AlGaN superlattice, as the strain relief layer, 30) was utilized to intentionally nucleate and enlarge V-pits in the lightemitting active region, as shown in Figs.…”