Vapor–liquid–solid growth of serrated GaN nanowires: shape selection driven by kinetic frustration

Ma, Zheng; McDowell, Dillon; Panaitescu, Eugen; Davydov, Albert V.; Upmanyu, Moneesh; Menon, Latika

doi:10.1039/c3tc31776e

Cited by 30 publications

(27 citation statements)

References 59 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Because of the energetics and the kinetics of growth, "sawtooth"-like structures on the sidewalls of nanowires have been observed for Si and GaN nanowires. [16][17][18] A closer scrutiny of most of the iron silicide nanowires on Si(110), observed in earlier studies, shows the presence of uneven sidewalls. This was neither pointed out nor any effort was made to understand their origin.…”

mentioning

confidence: 84%

Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

Das

Mahato

Bisi

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

Iron silicide (cubic FeSi2) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi2 nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along their edges.

show abstract

mentioning

confidence: 84%

Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

Das

Mahato

Bisi

et al. 2014

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…We note, however, that the structure of various non-linear (stepped, helical, etc.) nanowires that have been experimentally realized, 5, 34,35 have been found or theoretically argued to be either highly crystalilne 5,34 or large-defect dominated.…”

Section: Nanowire Geometry Effects: Initial Shape Crystalline Orientmentioning

confidence: 99%

Kinetic Monte Carlo model of breakup of nanowires into chains of nanoparticles

Gorshkov

Privman

2017

Journal of Applied Physics

View full text Add to dashboard Cite

A kinetic Monte Carlo approach is applied to studying shape instability of nanowires that results in their breaking up into chains of nanoparticles. Our approach can be used to explore dynamical features of the process that correspond to experimental findings, but that cannot be interpreted by continuum mechanisms reminiscent of the description of the Plateau-Rayleigh instability in liquid jets. For example, we observe long-lived dumbbell-type fragments and other typical non-liquid-jet characteristics of the process, as well as confirm the observed latticeorientation dependence of the breakup process of single-crystal nanowires. We provide snapshots of the process dynamics, and elaborate on the nanowire-end effects, as well as on the morphology of the resulting nanoparticles.

show abstract

“…Fabrication of semiconductor and oxide nanowires typically uses dewetting of a low melting point metal catalyst where the resulting clusters set the feature size while epitaxy to the underlying substrate can control the growth orientation. 5,[35][36][37] More recently, an electrochemical electrolyte-liquid-solid analog has been demonstrated for growth of Ge nanowires. [38][39][40] In another approach nanowire growth of metallic nanostructures capitalizes on the intrinsic or additive engineered anisotropic energetics and/or growth kinetics on different crystal facets.…”

mentioning

confidence: 99%

Morphological Transitions during Au Electrodeposition: From Porous Films to Compact Films and Nanowires

Josell

Levin

Moffat

2015

J. Electrochem. Soc.

View full text Add to dashboard Cite

Gold electrodeposition was studied in a sulfite electrolyte to which micromolar concentrations of Tl 2 SO 4 were added. Hysteresis and a regime of negative differential resistance (NDR) evident in electroanalytical measurements are correlated with deposit morphology and interpreted through measurements of thallium underpotential deposition (upd). Deposit morphologies range from specular surfaces to highly faceted dendrite-like grains of moderate aspect ratio and, for potentials within the NDR region, sub-50 nm diameter, high aspect ratio 110 oriented single crystal nanowires. The nanowires exhibit an epitaxial relationship to the substrate that permits one step fabrication of surfaces densely covered with high aspect ratio nanowires having controlled orientations. The NDR and nanowires are a consequence of the non-monotonic relationship between Tl coverage and growth velocity; at low coverage Tl accelerates Au deposition while at higher coverage it inhibits deposition. Immiscibility of the Tl and Au supports on-going surface segregation during area expansion that accompanies nanowire growth leading to greater dilution of the additive coverage and more rapid growth at the nanowire tips, while the sidewalls remain passivated by a saturated Tl coverage. Interest in nanostructures is driven by the unique properties associated with high surface area to volume materials that express quantum or mesoscale phenomena of importance to diverse subjects ranging from biology and medicine 1-3 to optics and energy conversion. [4][5][6][7] Of particular interest is the substantial literature on solution or vapor processing to yield a wide variety of nanostructures including high aspect ratio nanowires. 4,8,9 Solution-based, chemical reduction processes are attractive because they are inexpensive and scalable.9-18 Subsequent processing involving particle packing and/or substrate interactions can lead to higher order organization and colloidal crystals.19 Alternatively, nanostructures can be grown on or in surfaces that have been shaped by lithography or other means to obtain control of orientation and/or placement.8 Electrochemical processing may involve throughmask plating in patterned templates 20,21 or superconformal electrodeposition of metals and alloys [22][23][24][25][26][27][28][29][30][31] including gold 32-34 in high aspect ratio features. However, these processes require nanoscale patterned topography to create such structures and the associated patterning often comes with increased processing complexity.Controlled anisotropic growth and orientation, if not position, is possible through vapor-liquid-solid (VLS) growth processes. Fabrication of semiconductor and oxide nanowires typically uses dewetting of a low melting point metal catalyst where the resulting clusters set the feature size while epitaxy to the underlying substrate can control the growth orientation. 5,[35][36][37] More recently, an electrochemical electrolyte-liquid-solid analog has been demonstrated for growth of Ge nanowires. [38][39][40] In another ap...

show abstract

Vapor–liquid–solid growth of serrated GaN nanowires: shape selection driven by kinetic frustration

Cited by 30 publications

References 59 publications

Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

Kinetic Monte Carlo model of breakup of nanowires into chains of nanoparticles

Morphological Transitions during Au Electrodeposition: From Porous Films to Compact Films and Nanowires

Contact Info

Product

Resources

About