Vapor Deposition of Silicon Nitride Film on Silicon and Properties of MNS Diodes

Abstract

Silicon nitride film was deposited on silicon by gas phase reaction between SiH4 and NH3 using N2 as the carrier gas and a horizontal resistance-heated furnace at the temperature range of 650 to 950°C. The higher the substrate temperature became, the larger the wave number of the infrared, which corresponds to the maximum absorption. Film deposited at lower temperature always showed the hysteresis of C-V curve, but it almost disappeared by elevating substrate temperature and supplying much amount of ammonia. MNS diode was very stable to the BT-treatment even if it was intentionally contaminated with NaOH. Interface charge density was nearly 1.5×1012e/cm2 which was little dependent of surface treatments before depositing the film, and seemed to be almost determined by the positive charge in nitride film. C-V curve of the diode showed the frequency dependence, which was due to the accumulation of electrons in nitride film near the interface.

Properties of Ammonia-Free Nitrogen-Si[sub 3]N[sub 4] Films Produced at Low Temperatures

“…Either the range where the phosphorus concentration is sufficiently high was too small, the anneal temperatures were too low, or additional oxygen is necessary. We do not believe that the nondetection is caused by the choice of transmission instead of reflectance measurements because this choice was made in accordance with the work of Fraenz et al (7) who found the band very pronounced in transmission.…”

Silicon Nitride Coatings on Copper

“…Manuscript received Oct. 14, 1971. This was Paper 63 presented at the Cleveland, Ohio, Meeting of the Society, Oct. [3][4][5][6][7] 1971.…”

“…It has very attractive chemical and physical properties which have encouraged its use as a coating material for microelectronic devices. Several methods (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14) of preparing silicon nitride have been reported in the literature. The three major methods for depositing silicon nitride on high melting substrates are: (i) chemical vapor deposition, (ii) reactive sputtering, and (iii) rf glow discharge.…”

Etching and Chemical Control of the Silicon Nitride Surface

“…Silicon nitride (Si x N 4 ) is a material commonly used in microelectronic industry for its strong mechanical resistance and its insulator and chemical barrier properties. − Because of its biocompability, Si x N 4 also finds application in biomedical and biosensor fields. − In comparison with silicon, it offers the extra advantage of a low optical refractive index, , which is favorable for several detection schemes in the biochip context . Such a material can be easily obtained as thin films by (plasma-enhanced) chemical vapor deposition ((PE)-CVD) − or by reactive magnetron sputtering. − When exposed to atmosphere, silicon nitride is covered by a native oxynitride layer − which needs to be removed for some applications.…”