Vanadium oxides thin films and fixed-temperature heat sensor with memory

Verkelis, J.; Bliznikas, Z.; Breive, K.; Dikinis, V.; Šarmaitis, R.

doi:10.1016/s0924-4247(98)00054-5

Cited by 20 publications

(6 citation statements)

References 2 publications

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“…The temperature dependence of the I-V characteristics (see Table 1) is attributed to the extremely strong influence of the temperature on the conductivity of the VO 2 film, as this material is used in the manufacturing of bolometric matrices [54] and temperature sensors [55]. A particularly strong dependence exists in the region of the metal to insulator phase transition (MIT), observed near the threshold temperature T t = 68 • C, in the temperature hysteresis region.…”

Section: Discussionmentioning

confidence: 99%

“…Above T t , the VO 2 film operates in the high-conductivity (metal) phase, and, below T t , the VO 2 film exists in the low-conductivity (insulator) phase. The jump in resistance between these phases can reach several orders of magnitude (10-10 4 ), depending on the structure of the film [55]. Many researchers, including us [56], have demonstrated that the effect of electrical switching occurs due to MIT, when the current passing through the VO 2 structure heats it with Joule heat to a temperature T t .…”

Section: Discussionmentioning

confidence: 99%

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Switch Elements with S-Shaped Current-Voltage Characteristic in Models of Neural Oscillators

Борисков

Velichko

2019

Electronics

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In this paper, we present circuit solutions based on a switch element with the S-type I–V characteristic implemented using the classic FitzHugh–Nagumo and FitzHugh–Rinzel models. Using the proposed simplified electrical circuits allows the modeling of the integrate-and-fire neuron and burst oscillation modes with the emulation of the mammalian cold receptor patterns. The circuits were studied using the experimental I–V characteristic of an NbO2 switch with a stable section of negative differential resistance (NDR) and a VO2 switch with an unstable NDR, considering the temperature dependences of the threshold characteristics. The results are relevant for modern neuroelectronics and have practical significance for the introduction of the neurodynamic models in circuit design and the brain–machine interface. The proposed systems of differential equations with the piecewise linear approximation of the S-type I–V characteristic may be of scientific interest for further analytical and numerical research and development of neural networks with artificial intelligence.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Switch Elements with S-Shaped Current-Voltage Characteristic in Models of Neural Oscillators

Борисков

Velichko

2019

Electronics

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“…Out of various transition metal oxides, members of the vanadates family (VO 2 , V 2 O 3 , V 2 O 5 ) performing a metal-insulator (more correctly, semiconductor -metal transition (SMT)) [1]. This can be neither achieved by doping with transition element hence a crystalline buffer layer was introduced between the substrate and V 2 O 5 [3]. The phase transition temperature can also be obtained by metal doping (which will reduce the phase transition temperature).…”

Section: Introductionmentioning

confidence: 99%

Studies on Magnetron Sputtered V2O5 Thin Films Deposited over ZnO Buffer Layer

Ranjani

Raj

Shree

et al. 2016

Materials Today: Proceedings

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“…The VO 2 can be wildly used in electrics and optics switch implement. As function material, it has broad applied foreground at laser protection, temperature sensor and optics storage [2][3][4][5][6][7][8] .…”

Section: Introductionmentioning

confidence: 99%

“…VO2 refraction of different temperature After our amend, the relationship between n and λ is formula(5).…”

mentioning

confidence: 99%

The calculation of vanadium dioxide thin films optical properties at 10.6 micron

Xue-song

Wang

Sun

et al. 2012

2012 International Conference on Optoelectronics and Microelectronics

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The vanadium oxide thin films are prepared on zinc selenide by DC magnet sputtering method. The optical character changing of vanadium oxide thin films are tested by CO 2 laser, some phenomena is observed. The components are gotten by The X-ray photoelectron spectroscopy (XPS). By utilizing the Castep program package of the Material Studio simulation tool, based on local density function approximation and pseudo-potential method, optimization for the geometric structure of vanadium dioxides is accomplished with the BFGS calculate way. Using the super soft pseudo-potential of reciprocal space lattice, the optical characteristics of crystal are calculated within the 7 μm scope. Furthermore, some trends can be concluded from the extended estimation for the optical characteristics at 10.6 μm by formula.

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Vanadium oxides thin films and fixed-temperature heat sensor with memory

Cited by 20 publications

References 2 publications

Switch Elements with S-Shaped Current-Voltage Characteristic in Models of Neural Oscillators

Switch Elements with S-Shaped Current-Voltage Characteristic in Models of Neural Oscillators

Studies on Magnetron Sputtered V2O5 Thin Films Deposited over ZnO Buffer Layer

The calculation of vanadium dioxide thin films optical properties at 10.6 micron

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