Vanadium in GaAs and GaP

Ulrici, W.; Eaves, Lucile; Friedland, K.‐J.; Halliday, D.P.; Kreissl, J.

doi:10.4028/www.scientific.net/msf.10-12.639

Cited by 5 publications

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“…In recent papers, the behaviour of vanadium as a substitutional impurity in GaP has been investigated by electrical, optical, electron paramagnetic resonance (EPR), and phonon scattering experiments [1][2][3][4]. The V 2+ Ga /V 3+ Ga acceptor level was found at E c − 0.58 eV and several spectroscopic properties of V 3+ Ga could be clarified.…”

Section: Introductionmentioning

confidence: 99%

“…V 4+ (d 1 ) in III-V semiconductors is of particular interest because it has the same very simple d 1 electron configuration as Ti 3+ Ga , which is well investigated in GaAs, GaP, and InP, but in contrast to the neutral Ti 3+ it is positively charged. Therefore, from careful spectroscopic analyses of d 1 impurities in III-V semiconductors valuable information about transition metal impurities in III-V semiconductors can be expected, in particular about their electron-phonon interaction.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical absorption and electron paramagnetic resonance of in GaP

Ulrici¹,

Friedland²,

Kreissl³

et al. 1998

J. Phys.: Condens. Matter

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The results of optical absorption, electrical conductivity, and electron paramagnetic resonance (EPR) experiments on different p-type GaP:V:Zn samples are reported. The transition of gives rise to a broad triple-peaked absorption band and a zero-phonon line (ZPL) at . These features are explained as due to a strong Jahn-Teller coupling of the state. The reduced spin-orbit splitting is smaller than the strain-broadened line-width of the ZPL. The EPR spectrum of , which is angular dependent at T < 4 K, is analysed (g = 1.960, ). Its intensity shows dependence on microwave power characteristics for an impurity with an ground state. The photo-induced recharging is monitored by optical absorption as well as EPR and requires the recharging of anti-site defects.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%