“…To solve this challenge, MM structures integrated with active media (i.e., active THz devices), such as MEMS [25,26], graphene [27][28][29], vanadium dioxide (VO 2 ) [30,31], indium antimonide (InSb) [32,33] and semiconductors silicon (Si) [34,35], etc., have been presented and designed to realize the dynamic and active manipulation of THz wave under the control of external stimuli, such as electrical biasing, optical illumination and thermal excitation. Among these tunable materials, the photoconductive semiconductors (Si) [36,37] can provide a viable pathway to realize a fast change of the reflection/transmission responses for the incident waves under the excitation of light pulse with its exceptional opticalelectrical characteristics, including ultrafast response, low cost and high quantum efficiency.…”