2019
DOI: 10.1364/oe.27.019436
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Vanadium dioxide based broadband THz metamaterial absorbers with high tunability: simulation study

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Cited by 73 publications
(28 citation statements)
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“…The values of the (complex) relative permittivity of VO at any value of the free-space wavelength are significantly different in its two crystallographic phases. As VO is a dissipative insulator (or semiconductor) (I phase) when monoclinic but metallic (M phase) when tetragonal provided that the free-space wavelength nm, it can be used in reconfigurable metasurfaces in the infrared 12 , 13 and terahertz 14 , 15 spectral regimes. The capability in switching of functionality in structures comprising tunable materials is often considered from the multifunctionality perspective 16 – 18 .…”
Section: Introductionmentioning
confidence: 99%
“…The values of the (complex) relative permittivity of VO at any value of the free-space wavelength are significantly different in its two crystallographic phases. As VO is a dissipative insulator (or semiconductor) (I phase) when monoclinic but metallic (M phase) when tetragonal provided that the free-space wavelength nm, it can be used in reconfigurable metasurfaces in the infrared 12 , 13 and terahertz 14 , 15 spectral regimes. The capability in switching of functionality in structures comprising tunable materials is often considered from the multifunctionality perspective 16 – 18 .…”
Section: Introductionmentioning
confidence: 99%
“…[6] These two factors prevent the simultaneous achievement of orthogonal-polarization modulation and high efficiency, especially in terahertz or higher frequency regions. Although multilayer vanadium-dioxide metasurfaces have been seen as promising for use in efficient multifunctional devices, such as reconfigurable absorbers, [36][37][38][39][40][41][42][43][44][45][46][47][48] reprogrammable wavefront-engineering metasurfaces, [49,50] and devices switchable between quarterand half-wave plates, [51] these proposals have not been realized experimentally, because of the stringent fabrication challenges. Although a few studies have reported experimental realization of multilayer vanadium-dioxide structures for infrared polarization modulation [52] and terahertz asymmetric transmission, [53] they did not focus on orthogonal-polarization modulation.…”
Section: Introductionmentioning
confidence: 99%
“…To solve this challenge, MM structures integrated with active media (i.e., active THz devices), such as MEMS [25,26], graphene [27][28][29], vanadium dioxide (VO 2 ) [30,31], indium antimonide (InSb) [32,33] and semiconductors silicon (Si) [34,35], etc., have been presented and designed to realize the dynamic and active manipulation of THz wave under the control of external stimuli, such as electrical biasing, optical illumination and thermal excitation. Among these tunable materials, the photoconductive semiconductors (Si) [36,37] can provide a viable pathway to realize a fast change of the reflection/transmission responses for the incident waves under the excitation of light pulse with its exceptional opticalelectrical characteristics, including ultrafast response, low cost and high quantum efficiency.…”
Section: Introductionmentioning
confidence: 99%