Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N

Wang, J. H.; Mohney, Suzanne E.; Wang, S. H.; Chowdhury, U.; Dupuis, R. D.

doi:10.1007/s11664-004-0194-7

Cited by 31 publications

(24 citation statements)

References 8 publications

(5 reference statements)

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“…Recently, it has been reported that V-based contacts with similar multilayer structures can be processed at lower temperatures and provide lower specific contact resistances than Ti-based metallizations as the AlN mole fraction increases in n-Al x Ga 1-x N. 1 Minimization of contact resistance for different compositions and pretreatments of Al x Ga 1-x N can be achieved by optimization of layer thicknesses for either Ti-or V-based contacts. [1][2][3][4][5][6][7] For bottom-emitting ultraviolet light-emitting diodes, plasma etching is required to contact a buried n-type layer, but plasma etching may be damaging to the electrical and physical properties of the semiconductor surface. 8 The multilayer contacts must then be altered to accommodate the changes in the properties of the etched semiconductor and minimize contact resistance.…”

Section: Introductionmentioning

confidence: 99%

Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N

Miller

Koo

Bogart

et al. 2007

Journal of Elec Materi

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Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-Al 0.58 Ga 0.42 N. The reaction depth of low-resistance V-based contacts to as-received n-Al 0.58 Ga 0.42 N is very limited, unlike previously reported Ti-based contacts to n-Al x Ga 1-x N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-Al 0.58 Ga 0.42 N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the order of 40 nm. To achieve a low contact resistance on plasma-etched n-Al 0.58 Ga 0.42 N, different metal layer thicknesses and processing conditions were required. The Ti-and V-based contacts to plasma-etched n-Al 0.58 Ga 0.42 N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-Al 0.58 Ga 0.42 N. The similarity in phase formation in the contacts to plasma-etched n-Al 0.58 Ga 0.42 N is likely the reason behind the similarity in specific contact resistances.

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Section: Introductionmentioning

confidence: 99%

Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N

Miller

Koo

Bogart

et al. 2007

Journal of Elec Materi

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“…Indeed, it was shown that using the traditional metal contact schemes of Ti/ Al/Ti/Au, one can form good Ohmic contacts to n-AlGaN only up to about 20% AlN mole fraction [99]. Other workers have demonstrated that vanadium-based contacts can form good Ohmic contacts to n-GaN [100,101] and also to n-AlGaN [102][103][104].…”

Section: Device Fabricationmentioning

confidence: 99%

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

2017

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This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, 'visible blind' and 'solar blind' detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

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“…The Al/Pd has been investigated as ohmic contact materials [1,2]. To understand the physical properties and the technological applications of these compounds, it is necessary to have a better knowledge of the thermodynamic properties of this technically relevant system.…”

Section: Introductionmentioning

confidence: 99%

Thermodynamic assessment of the Al–Pd system

Wang

et al. 2006

Intermetallics

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Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N

Cited by 31 publications

References 8 publications

Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N

Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-Al0.58Ga0.42N

Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

Thermodynamic assessment of the Al–Pd system

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