Van der Waals Multiferroic Tunnel Junctions

Su, Yongfu; Li, Xinlu; Zhu, Meng; Zhang, Jia; You, Long; Tsymbal, Evgeny Y.

doi:10.1021/acs.nanolett.0c03452

Cited by 62 publications

(47 citation statements)

References 49 publications

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“… 500 Furthermore, recent theoretical studies pointed out toward realization of four resistance states in vdW multiferroic tunnel junctions comprising FGT layers separated by 2D ferroelectric In 2 Se 3 barrier layers. 501 TMR up to 3.1% has been reported when using semiconducting MoS 2 as a spacer, acting as a conductor rather than a tunnel barrier. 115 The prediction of FeCl 2 , FeBr 2 , and FeI 2 as half metals suggests these materials could further improve the figures for TMR.…”

Section: Spintronics: From Fundamentals To Devicesmentioning

confidence: 99%

The Magnetic Genome of Two-Dimensional van der Waals Materials

et al. 2022

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Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism ( i.e. , synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

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Section: Spintronics: From Fundamentals To Devicesmentioning

confidence: 99%

The Magnetic Genome of Two-Dimensional van der Waals Materials

et al. 2022

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“…[ 27 ] The FGT‐based spin valves with a semiconductor or an insulator as the spacer layer, or even a ferroelectric layer have been proposed theoretically. [ 28–30 ] Experimentally, the tunneling FGT/hBN/FGT spin valves have been demonstrated and a high MR of 160% was achieved. [ 31 ] The semiconductor MoS 2 has also been used as the spacer layer in FGT/MoS 2 /FGT devices, but the MoS 2 acts as a conductive layer rather than a tunneling barrier.…”

Section: Introductionmentioning

confidence: 99%

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

et al. 2021

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2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low‐dimensional electronic, optoelectronic, and spintronic devices. Here, all‐2D van der Waals vertical spin‐valve devices, that combine the 2D layered semiconductor InSe as a spacer with the 2D layered ferromagnetic metal Fe3GeTe2 as spin injection and detection electrodes, are reported. Two distinct transport behaviors are observed: tunneling and metallic, which are assigned to the formation of a pinhole‐free tunnel barrier at the Fe3GeTe2/InSe interface and pinholes in the InSe spacer layer, respectively. For the tunneling device, a large magnetoresistance (MR) of 41% is obtained under an applied bias current of 0.1 µA at 10 K, which is about three times larger than that of the metallic device. Moreover, the tunneling device exhibits a lower operating bias current but a more sensitive bias current dependence than the metallic device. The MR and spin polarization of both the metallic and tunneling devices decrease with increasing temperature, which can be fitted well by Bloch's law. These findings reveal the critical role of pinholes in the MR of all‐2D van der Waals ferromagnet/semiconductor heterojunction devices.

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“…There have been several theoretical studies on potential multiferroic van der Waals (vdW) heterostructures. [4][5][6][7][8] However, there is still a need to discover and investigate more 2D multiferroic materials, their heterostructures and the potential devices that can be built from them.…”

Section: Introductionmentioning

confidence: 99%