Van der Waals heterostructures

Castellanos-Gómez, Andrés; Duan, Xiangfeng; Fei, Zhe; Gutiérrez, Humberto; Huang, Yuan; Huang, Xinyu; Quereda, Jorge; Qian, Qi; Sutter, Eli; Sutter, Peter

doi:10.1038/s43586-022-00139-1

Cited by 147 publications

(92 citation statements)

References 198 publications

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“…Alternatively, a plethora of dense interface junctions can be formed by combine 2D TMDs with several other 2D nanosheets in one vertical stack, [98][99][100] held together by van der Waals forces [101][102][103][104] (the same forces that hold layered crystals together). Such dense interface junctions have ultrafast excited-state dynamics, allowing ultrafast electron migration, long-lived spin and valley polarization in resident carriers, and thereby promoting the separation of photogenerated electron-hole pairs.…”

Section: Dense Interface Junctionsmentioning

confidence: 99%

2D Transition Metal Dichalcogenides for Photocatalysis

et al. 2023

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Two‐dimensional (2D) transition metal dichalcogenides (TMDs), a rising star in the post‐graphene era, are fundamentally and technologically intriguing for photocatalysis. Their extraordinary electronic, optical, and chemical properties endow them as promising materials for effectively harvesting light and catalyzing the redox reaction in photocatalysis. Here, we present a tutorial‐style review of the field of 2D TMDs for photocatalysis to educate researchers (especially the new‐comers), which begins with a brief introduction of the fundamentals of 2D TMDs and photocatalysis along with the synthesis of this type of material, then look deeply into the merits of 2D TMDs as co‐catalysts and active photocatalysts, followed by an overview of the challenges and corresponding strategies of 2D TMDs for photocatalysis, and finally look ahead this topic.

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Section: Dense Interface Junctionsmentioning

confidence: 99%

2D Transition Metal Dichalcogenides for Photocatalysis

et al. 2023

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“…Heterostructures of 2D and van der Waals crystals − have attracted interest as they hold promise for applications based not only on the properties of the individual component materials, but also on emergent properties that arise from their integration and the resulting interfaces. Different fabrication approaches depend on the type of heterostructure.…”

Section: Introductionmentioning

confidence: 99%

Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics

et al. 2023

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The emergence of atomically thin crystals has allowed extending materials integration to lateral heterostructures where different 2D materials are covalently connected in the plane. The concept of lateral heterostructures can be generalized to thicker layered crystals, provided that a suitably faceted seed crystal presents edges to which a compatible second van der Waals material can be attached layer by layer. Here, we examine the possibility of integrating multilayer crystals of the group IV monochalcogenides SnS and GeSe, which have the same crystal structure, small lattice mismatch, and similar bandgaps. In a two-step growth process, lateral epitaxy of GeSe on the sidewalls of multilayer SnS flakes (obtained by vapor transport of a SnS 2 precursor on graphite) yields heterostructures of laterally stitched crystalline GeSe and SnS without any detectable vertical overgrowth of the SnS seeds and with sharp lateral interfaces. Combined cathodoluminescence spectroscopy and ab initio calculations show the effects of small band offsets on carrier transport and radiative recombination near the interface. The results demonstrate the possibility of forming atomically connected lateral interfaces across many van der Waals layers, which is promising for manipulating optoelectronics, photonics, and for managing charge-and thermal transport.

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“…Furthermore, the random position growth leads to low reproducibility. Second, it is hard to satisfy the growth conditions of the two target materials simultaneously, such as growth temperature and gas atmosphere, which limits the categories of heterostructures that in situ direct growth can achieve …”

Section: Introductionmentioning

confidence: 99%

Fast Fabrication of WS₂/Bi₂Se₃ Heterostructures for High-Performance Photodetection

Fan

Zheng

et al. 2023

ACS Appl. Mater. Interfaces

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Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties, which expand the possibilities for future optoelectronic, photovoltaic, and nanoelectronic applications. A portable, fast, and deterministic transfer technique is highly needed for the fabrication of heterostructures. Herein, we report a fast half-wet poly(dimethylsiloxane) (PDMS) transfer process utilizing the change of adhesion energy with the help of micron-sized water droplets. Using this method, a vertical stacking of the WS2/Bi2Se3 heterostructure with a straddling band configuration is successfully assembled on a fluorophlogopite substrate. Thanks to the complementary band gaps and high efficiency of interfacial charge transfer, the photodetector based on the heterostructure exhibits a superior responsivity of 109.9 A W–1 for a visible incident light at 473 nm and 26.7 A W–1 for a 1064 nm near-infrared illumination. Such high photoresponsivity of the heterostructure demonstrates that our transfer method not only owns time efficiency but also ensures high quality of the heterointerface. Our study may open new pathways to the fast and massive fabrication of various vertical 2D heterostructures for applications in twistronics/valleytronics and other band engineering devices.

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Van der Waals heterostructures

Cited by 147 publications

References 198 publications

2D Transition Metal Dichalcogenides for Photocatalysis

2D Transition Metal Dichalcogenides for Photocatalysis

Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics

Fast Fabrication of WS₂/Bi₂Se₃ Heterostructures for High-Performance Photodetection

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Van der Waals heterostructures

Cited by 147 publications

References 198 publications

2D Transition Metal Dichalcogenides for Photocatalysis

2D Transition Metal Dichalcogenides for Photocatalysis

Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics

Fast Fabrication of WS2/Bi2Se3 Heterostructures for High-Performance Photodetection

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Fast Fabrication of WS₂/Bi₂Se₃ Heterostructures for High-Performance Photodetection