Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

Ghasemi, Arsham; Kepaptsoglou, Demie; Galindo, Pedro L.; Ramasse, Quentin M.; Hesjedal, T.; Lazarov, Vlado K.

doi:10.1038/am.2017.111

Cited by 24 publications

(12 citation statements)

References 33 publications

(30 reference statements)

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“…For the Bi 2 Te 3 film, these mesh scans are shown in Figs. 4a- It is interesting to note that the Bi 2 Te 3 film is indeed relaxed, as expected in van der Waals epitaxy [22], while the Bi 2 Te 2.6 film is perfectely matched to the substrate. The actual shift of hybrid peaks due to film relaxation is estimated from Eqs.…”

supporting

confidence: 55%

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

Morelhão

Kycia

Netzke

et al. 2018

Applied Physics Letters

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Epitaxial films of bismuth telluride topological insulators have received increasing attention due to potential applications in spintronic and quantum computation. One of the most important properties of epitaxial films is the presence of interface defects due to lateral lattice mismatch since electrically active defects can drastically compromise device performance. By describing hybrid reflections in hexagonal bismuth telluride films on cubic substrates, in-plane lattice mismatches were characterized with accuracy at least 20 times better than using other X-ray diffraction methods, providing clear evidence of 0.007% lateral lattice mismatch, consistent with stress relaxation associated with van der Waals gaps in the film structure.

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supporting

confidence: 55%

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

Morelhão

Kycia

Netzke

et al. 2018

Applied Physics Letters

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“…For samples S60 and S62, these lengths are close to the nominal thickness of 20 nm. But for sample S57, the coherence length is smaller than the nominal thickness of 40 nm, probably indicating to structural defects unaccounted for in the X-ray diffrac- Although vdW epitaxy can take place on substrates with relatively large lateral lattice mismatch [11,[45][46][47], it has been demonstrated in Bi 2 Te 3 (001) films on BaF 2 (111) that even mismatch as small as 0.02% can drastically impact the lateral lattice coherence length, or the lateral size of crystalline domains [12]. In MnBi 2 Te 4 (001) films on BaF 2 (111) the lattice mismatch |∆a/a| = |a A −a s |/a S is much bigger, of about 1.1%.…”

Section: Resultsmentioning

confidence: 96%

X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator

S.¹,

Fornari²,

Camillo³

et al. 2021

Preprint

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Synthesis of new materials demands structural analysis tools suited to the particularities of each system. Van der Waals (vdW) materials are fundamental in emerging technologies of spintronics and quantum information processing, in particular topological insulators and, more recently, materials that allow the phenomenological exploration of the combination of non-trivial electronic band topology and magnetism. Weak vdW forces between atomic layers give rise to composition fluctuations and structural disorder that are difficult to control even in a typical binary topological insulators such as Bi 2 Te 3 . The addition of a third element as in MnBi 2 Te 4 makes the epitaxy of these materials even more chaotic. In this work, statistical model structures of thin films on single crystal substrates are described. It allows the simulation of X-ray diffraction in disordered heterostructures, a necessary step towards controlling the epitaxial growth of these materials. On top of this, the diffraction simulation method described here can be readily applied as a general tool in the field of design new materials based on stacking of vdW bonded layers of distint elements.

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“…[21] One of the challenges for monolithic device integration of TIs is their weak bonding to most substrates, originating from the van der Waals (vdW)-type interaction between film and substrate. While vdW bonding (inherent to the layered nature of the (Sb,Bi)2(Se,Te)3 TI family) can be exploited for overcoming the lattice mismatch in TI-based heterostructures, [22] the weak bonding between TI film and substrate can significantly increase the density of domain boundaries [16] and the formation of rotational twins. As expected, twin formation can be suppressed by growing on perfectly lattice-matched substrates like the insulating BaF2(111).…”

Section: Takedownmentioning

confidence: 99%

Modification of the van der Waals interaction at the Bi2Te3 and Ge(111) interface

Nawa

Kepaptsoglou

Ghasemi

et al. 2021

Phys. Rev. Materials

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We present a structural and density functional theory study of the interface of the quasi-twinfree-grown three-dimensional topological insulator Bi2Te3 on Ge(111). Aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy in combination with first-principles calculations show that the weak van der Waals adhesion between the Bi2Te3 quintuple layer and Ge can be overcome by forming an additional Te layer at their interface. The first-principles calculations of the formation energy of the additional Te layer show it to be energetically favorable as a result of the strong hybridization between the Te and Ge.

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Van der Waals epitaxy between the highly lattice mismatched Cu-doped FeSe and Bi2Te3

Cited by 24 publications

References 33 publications

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

Hybrid reflections from multiple x-ray scattering in epitaxial bismuth telluride topological insulator films

X-ray diffraction tools for structural modeling of epitaxic films of an intrinsic antiferromagnetic topological insulator

Modification of the van der Waals interaction at the Bi2Te3 and Ge(111) interface

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