van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2

Ohuchi, Fumio S.; Parkinson, B. A.; Ueno, Keiji; Koma, Atsushi

doi:10.1063/1.346574

Cited by 153 publications

(109 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…azimuthially aligned (Fig. 1), suggesting that the epilayers are epitaxially grown such that [11][12][13][14][15][16][17][18][19][20] 6,7,16 indicating the absence of strain as would be expected in van der Waals heteroepitaxy 17,18 of these materials.…”

mentioning

confidence: 99%

Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

Aretouli

Tsipas

Tsoutsou

et al. 2015

Applied Physics Letters

122

View full text Add to dashboard Cite

Using molecular beam epitaxy, atomically thin 2D semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures are grown on AlN(0001)/Si(111) substrates. Details of the electronic band structure of HfSe2 are imaged by in-situ angle resolved photoelectron spectroscopy indicating a high quality epitaxial layer. High-resolution surface tunneling microscopy supported by first principles calculations provides evidence of an ordered Se adlayer, which may be responsible for a reduction of the measured workfunction of HfSe2 compared to theoretical predictions. The latter reduction minimizes the workfunction difference between the HfSe2 and MoSe2 layers resulting in a small valence band offset of only 0.13 eV at the MoSe2/HfSe2 heterointerface and a weak type II band alignment.

show abstract

mentioning

confidence: 99%

Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

Aretouli

Tsipas

Tsoutsou

et al. 2015

Applied Physics Letters

122

View full text Add to dashboard Cite

show abstract

“…This goes farther than the observation made by Ohuchi et al, when van der Waals epitaxy on the sulfurterminated GaAs surface was first demonstrated: ''...inertness of the surfaces as well as absence of surface dangling bonds appear to be prerequisites of the ͓van der Waals epitaxy͔ process.'' 4 We find that van der Waals epitaxy is possible if the film has a layered structure and the substrate is well ordered ͑but not necessarily also of a layered structure͒.…”

Section: Discussionmentioning

confidence: 99%

“…For TEM examination, the cross-sectional samples were prepared first by mechanical thinning and then argon ion milling; images were obtained using 200 kV Jeol 2000 EX and Topcon EM002B electron microscopes. 4 He ϩ backscattering measurements ͑for compositional characterization and thickness estimation͒ and channeling measurements ͑for characterizing the crystallographic alignment͒ were made using a scattering angle of 170°. When an optimal mass resolution was desired ͑hence separating the gallium and selenium signals for thin films͒, an incoming beam energy of 3.1 MeV was used.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

The van der Waals epitaxial growth of GaSe on Si(111)

Vinh

Eddrief

Mahan

et al. 1997

Journal of Applied Physics

View full text Add to dashboard Cite

GaSe, a layered semiconductor, may be grown on the Si͑111͒ surface by molecular beam epitaxy. The crystalline quality is relatively good, in the sense that the MeV 4 He ion minimum channeling yield (ϳ30%) is as low as that of state-of-the-art bulk material, and the interface is atomically abrupt. The initial film deposits are epitaxial islands, and subsequent growth is in the Frank-van der Merwe mode. With the islands already relaxed at the nucleation stage and coalescing to essentially uniform coverage with the first monolayer of deposition, GaSe on Si͑111͒ provides an example of van der Waals epitaxy. However, it is difficult to understand how epitaxy ͑crystallographic alignment with the substrate͒ can occur in such a case, where the film is incommensurate starting from the initial nuclei. A mechanism for alignment of the islands is proposed: they are aligned with the silicon substrate through the influence of dangling bonds at their perimeter, being ''quasicommensurate '' by virtue of their small lateral size. Although discommensurate regions are created as the islands grow laterally, there is simply no change in their orientation. © 1997 American Institute of Physics. ͓S0021-8979͑97͒05011-1͔

show abstract

“…On the base of MBE, so-called van der Waals epitaxy was achieved in the 1980s [104][105][106][107]. van der Waals epitaxy is realizable for the materials with layered structure, such as graphene and TMDs, where the layers are weakly bound by van der Waals forces.…”

Section: Preparation Techniquesmentioning

confidence: 99%

Two-dimensional MoS$_{2}$ as a new material for electronic devices

Izyumskaya¹,

Demchenko²,

Avrutin³

2014

Turk J Phys

View full text Add to dashboard Cite

Abstract:We overview fundamental properties, preparation techniques, and potential device applications of singleand few-monolayer-thick molybdenum disulfide MoS 2 belonging to a new emerging class of materials: 2-dimensional semiconductors. To a large extent, the interest in the 2-dimensional materials is fueled by the quest for alternatives to graphene, which is hardly suitable for electronic devices because of the lack of a band gap. A unique combination of physical properties, including flexibility, high electron mobility, and optical transparency combined with a large band gap tunable from indirect 1.2 eV for bulk to direct 1.9 eV for a monolayer, make MoS 2 attractive for a variety of electronic and optoelectronic devices. The first device demonstrations are very encouraging: field-effect transistors with high current ON/OFF ratios, high-sensitivity phototransistors, logic circuits, and amplifiers based on monolayer-MoS 2 have been demonstrated. The layered structure of MoS 2 with other transition-metal dichalcogenides (WS 2 , WSe 2 , MoSe 2 , etc.) makes it possible to grow ultrathin, so-called van der Waals heterostructures with very abrupt interfaces and low defect density and paves the way for fabricating multilayered materials for novel electronic and optical devices.However, further progress towards potential commercialization of monolayer-MoS 2 -based devices requires serious efforts in the development of scalable fabrication techniques capable of producing large-area electronic-quality material.

show abstract

van der Waals epitaxial growth and characterization of MoSe2 thin films on SnS2

Cited by 153 publications

References 10 publications

Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

The van der Waals epitaxial growth of GaSe on Si(111)

Two-dimensional MoS$_{2}$ as a new material for electronic devices

Contact Info

Product

Resources

About