Valley splitting in silicon from the interference pattern of quantum oscillations

Abstract

We determine the energy splitting of the conduction-band valleys in two-dimensional (2D) electrons confined in silicon metal oxide semiconductor (Si-MOS) Hall-bar transistors. These Si-MOS Hall bars are made by advanced semiconductor manufacturing on 300 mm Si wafers and support a 2D electron gas of high quality with a maximum mobility of 17.6×10 3 cm 2 /Vs and minimum percolation density of 3.45 × 10 10 cm −2 . Because of the low disorder, we observe beatings in the Shubnikov-de Haas oscillations that arise from the energy-split two low-lying conduction band valleys. From the analysis of the oscillations beating patterns up to T = 1.7 K, we estimate a maximum valley splitting of ∆EV S = 8.2 meV at a density of 6.8 × 10 12 cm −2 . Furthermore, the valley splitting increases with density at a rate consistent with theoretical predictions for a near-ideal semiconductor/oxide interface.