Valley-polarized massive charge carriers in gapped graphene

Abstract

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Berry Curvature and Nonlocal Transport Characteristics of Antidot Graphene

“…To open a gap, one can fabricate a narrow graphene nanoribbon [15][16][17][18] or make a periodic array of holes, known as antidot graphene [19,20]. The band structure [19][20][21][22][23][24][25][26] and transport properties [27][28][29][30][31][32][33][34] of antidot graphene were extensively investigated; however, the topological properties, such as Berry curvature [35], are unknown. One might expect its Berry curvature to be zero since creating holes does not break either sublattice symmetry (inversion symmetry) or time-reversal symmetry.…”

Antiresonances in the Mid-Infrared Vibrational Spectrum of Functionalized Graphene

“…Such phenomena relying on intervalley scattering are of great interest in the emerging field of “valleytronics”, having stimulated proposals of applications such as valley valves and filters, valley contrasting Hall transport, or valley-dependent electron-polarized light interaction . Experimental evidence of valley scattering phenomena is scarce , and remains unreported in the MIR spectrum of graphene, although one would expect similar physics to occur.…”

Lithographic band structure engineering of graphene

“…This has led to more than a decade of research into ways of archiving dense nanostructuring of graphene without compromising the transport properties, but so far disorder at edges increasingly dominate transport measurements as pattern densities increase [22][23][24]. Figure 1 summarise a subset of key experimental works [19,20,[25][26][27][28][29][30][31] featuring twodimensional (2D) nanostructured graphene as well as microscale Hall bars for reference [31], with the reported charge carrier mobility, µ, plotted against the minimum feature size of the system. Here the mobility is calculated from the Drude model of conductivity, σ = neµ, where e is the electron charge.…”

“…Here the mobility is calculated from the Drude model of conductivity, σ = neµ, where e is the electron charge. In early devices fabricated from non-encapsulated graphene, extremely small and dense features have indeed been achieved with block copolymer (BCP) [25] masks, electron-beam lithography (EBL) [26,29,30], nanosphere lithography (NSL) [28], and nano-imprint lithography (NIL) [27]. However, the resulting charge carrier mobilities and associated mean free paths in these works were too low to support quantum transport of the charge carriers beyond semiclassical transport.…”

“…Curabitur consectetuer. EBL BCP [25] EBL [26] NIL [27] NSL [28] EBL [29] EBL [19] EBL [20] EBL [31] EBL [30] This work Minimum feature size, w (nm)…”