Valley-dependent transport in strain engineering graphene heterojunctions

Abstract

We study the effect of the strain on the band structure and the valley-dependent transport property of graphene heterojunctions. It is found that valley-dependent separation of electrons can be achieved by utilizing the strain and on-site energies. In the presence of the strain, the values of the transmission can be effectively adjusted by changing the strengths of the strain, while the transport angle basically keeps unchanged. When an extra on-site energy is simultaneously applied to the central scattering region, not only are the electrons of valleys K and K' separated into two distinct transmission lobes in opposite transverse directions, but the transport angles of two valleys can be significantly changed. Therefore, one can realize an effective modulation of valley-dependent transport by changing the strength and stretch angle of the strain and on-site energies, which can be exploited for graphene-based valleytronics devices.

Extraordinary mechanical performance in charged carbyne

“…Carbon allotropes have been widely explored and used in various fields of science and technology for the last few decades. In addition to the well-known two-dimensional (2D) graphene [1,2] and three-dimensional (3D) diamond, [3,4] onedimensional (1D) carbon chains, carbyne, has also attracted increasing attention, [5,6] since carbyne with an extreme structure has been predicted to have extreme properties. [7][8][9][10][11] However, carbyne has a higher energy than graphite carbon because of sp 1 hybridization, making the fabrication of such material challenging.…”