2015
DOI: 10.1103/physrevb.92.035424
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Valley blockade and multielectron spin-valley Kondo effect in silicon

Abstract: We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunnelling processes, and consistently with those allowed by the valley blockade regime, the manifestation of Kondo effect obeys to the periodicity 4 of the electron filling sequence typical of silicon emerging at occupation N=1, 2, 3. The spin-valley Kondo effect emerges under different kinds of screening depending on the electron filli… Show more

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Cited by 15 publications
(10 citation statements)
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References 51 publications
(78 reference statements)
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“…5(b), and the trend of the coefficients A and B are shown in the inset as a function of temperature, and as can be seen, there the range of increase in coefficient A is seen to increase at a faster rate than the change in coefficient B; this was taken to explain the dominance of co tunneling over sequential tunnelling in this low current regime. 40 As mentioned previously, the differen tial conductance sweeps exhibit strong resonance peaks at around 10 mV. These peaks are temperature and magnetic field dependent and exponentially decrease in height with an increase in either parameter [shown in Figs.…”
Section: B Electronic Transportmentioning
confidence: 54%
See 1 more Smart Citation
“…5(b), and the trend of the coefficients A and B are shown in the inset as a function of temperature, and as can be seen, there the range of increase in coefficient A is seen to increase at a faster rate than the change in coefficient B; this was taken to explain the dominance of co tunneling over sequential tunnelling in this low current regime. 40 As mentioned previously, the differen tial conductance sweeps exhibit strong resonance peaks at around 10 mV. These peaks are temperature and magnetic field dependent and exponentially decrease in height with an increase in either parameter [shown in Figs.…”
Section: B Electronic Transportmentioning
confidence: 54%
“…6(a), the differential conductance exhibits resonance peak features which are strongly tempera ture dependent. In order to probe the interaction of sequential and co tunneling conductivity, we rely on the theory devel oped for Coulomb gap inelastic co tunneling 40,41 I…”
Section: B Electronic Transportmentioning
confidence: 99%
“…During the Coulomb Blockade phenomenon, the electrons inside this quantum sized device will create a strong coulomb repulsion that prevent other electrons to flow, resulting in the device will no longer follow Ohm's law as shown in Figures 2a-2c. When very few electrons are involved and an external static magnetic field is applied, Coulomb blockade provides the ground for spin blockade (also called Pauli blockade) and valley blockade [16,17] which includes quantum mechanical effects due to spin and orbital interactions, respectively, between the electrons.…”
Section: Coulomb Blockadementioning
confidence: 99%
“…Artificial atoms 9 , as well as donor atoms in silicon 17 22 23 24 25 26 27 , are conveniently treated as Hubbard systems 21 in which onsite Coulomb repulsion is able to create a gap 28 . Even if a number of properties of solids are accounted for in terms of Bloch bands, while Coulomb interactions between electrons are neglected, band theory fails for materials with low magnetic-ordering temperatures but large insulating gaps 29 .…”
mentioning
confidence: 99%