2019
DOI: 10.1149/2.0281907jss
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Valence and Conduction Band Offsets for InN and III-Nitride Ternary Alloys on (−201) Bulk β-Ga2O3

Abstract: Valence and conduction band offsets of the InN/β-Ga 2 O 3 type-I heterojunction have been determined to be −0.55 ± 0.11 eV and −3.35 ± 0.11 eV, respectively, using X-ray photoelectron spectroscopy. The InN layers were grown using atomic layer epitaxy on (−201) oriented commercial β-Ga 2 O 3 substrates. Combining this data with published band offsets for the GaN and AlN heterojunctions to β-Ga 2 O 3 has allowed us to predict the band offsets for the AlGaN, AlInN, and InGaN ternary alloys to β-Ga 2 O 3. The cond… Show more

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Cited by 18 publications
(7 citation statements)
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“…Additionally, the maximum energy of the valence band (VBM) was determined to be 2.29 eV by the XPS analysis of the CsPbBr 3 QD-MoS 2 nanoflakes. , From these results, the electronic structure (band edge position) of the CsPbBr 3 QD-MoS 2 nanoflakes was determined.…”
Section: Resultsmentioning
confidence: 99%
“…Additionally, the maximum energy of the valence band (VBM) was determined to be 2.29 eV by the XPS analysis of the CsPbBr 3 QD-MoS 2 nanoflakes. , From these results, the electronic structure (band edge position) of the CsPbBr 3 QD-MoS 2 nanoflakes was determined.…”
Section: Resultsmentioning
confidence: 99%
“…XPS valence band spectra of the nanomaterials are used to predict the valence band maximum of each material following the reported method. [ 71 ] The rising edge of the peak present in the XPS valence band spectra is extrapolated to the baseline of the flat XPS valence band spectra as shown in Figure , and the intercept of the baseline is reported as the maximum of the valence band ( E v ). Fermi energy level ( E f ) is assumed to be at zero eV, hence E v is reported in negative energy values in Table 4.…”
Section: Resultsmentioning
confidence: 99%
“…Analysis of XPS valence band (VB) spectra is more challenging than core line analysis due to the complex nature of valence orbital contributions and interactions. Typical XPS analysis of the VB region band can reveal chemical changes induced by doping, defect and carrier behavior in semiconductors, or measure band offsets at a heterojunction. The work function of surfaces may also be measured by analysis of XPS valence bands, although this is more commonly carried out with ultraviolet photoemission spectroscopy (UPS).…”
Section: Introductionmentioning
confidence: 99%