Valance band offset of TiO2/CuGaO2 hetero-structure measured by x-ray photoelectron spectroscopy

Ajimsha, R. S.; Das, Amit K.; Sahu, Vikas Kumar; Joshi, M. P.; Kukreja, L. M.; Deshpande, Uday; Shripathi, T.

doi:10.1016/j.solmat.2015.04.035

Cited by 19 publications

(19 citation statements)

References 19 publications

(19 reference statements)

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“…The valence band maximum (VBM) position of the sample is obtained by extrapolating linearly the leading edge to the extended base line of the valence spectrum. [ 42 ] It determines the VBM to the Fermi level separation of Sb 2 Se 3 being 1.05 eV. The second row of the figure shows the results of Sb 2 Se 3 /VO 2 bilayer.…”

Section: Resultsmentioning

confidence: 99%

“…The valence band maximum (VBM) position of the sample is obtained by extrapolating linearly the leading edge to the extended base line of the valence spectrum. [42] 4d,e, the 3d 3/2 and 3d 5/2 peaks are measured to be 54.93, 54.11 eV for Se and 539.00, 529.67 eV for Sb. The peak of O 1s is overlapped with the peak of Sb 3d, which is marked in orange at 530.75 eV in Figure 4e.…”

Section: Band Diagram and Mechanism Explanationmentioning

confidence: 91%

“…The bandgap of VO 2 cannot be calculated simply by the absorption results, we use the literature value of 0.7 eV. [44] The valence band offset (VBO) and the conduction band offset (CBO) of the heterojunction are calculated using the Kraut's equation [45] VBO Sb 3d [42] The VBO and the CBO of the heterojunction are calculated to be 0.43 and 0.16 eV, respectively. With these data, the band diagram of the heterojunction can be constructed as shown in Figure 5.…”

Section: Band Diagram and Mechanism Explanationmentioning

confidence: 99%

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Self‐Powered Broad Spectral Photodetector with Ultrahigh Responsivity and Fast Response Based on Sb₂Se₃/VO₂ Heterojunction

Xin

Jiang

et al. 2021

Adv Materials Inter

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despite the advantages of being without outer energy, most self-powered photodetectors suffer from low photoresponsivity, hindering their commercial applications. Even with recent progresses, for those devices with relatively high responsivity, the slow response time remains another challenge. [14] Therefore, constructing a self-powered broadband photodetector with high responsivity and fast response time is of great importance.Antimony triselenide (Sb 2 Se 3 ), with advantages of suitable bandgap, [15] high absorption coefficient, excellent electronic properties, low toxicity, low cost, and relatively earth-abundant constituents, [16] has attracted great research attention for solar cells and photodetectors. [17][18][19] Vanadium oxides, especially VO 2 , are typical materials with strong electron correlations and metal-insulator transitions, which are promising for smart windows, optic switches, memories, etc. [20][21][22][23][24][25][26][27] In this study, we fabricated a bilayer film of Sb 2 Se 3 and VO 2 on a sapphire substrate, forming a heterojunction photodetector. Despite its simple structure, the photodetector shows a superhigh responsivity of 0.244 A W −1 without any outer bias and fast response speeds of 200 µs for rise and 360 µs for decay. It should be emphasized that our self-powered photodetectors possess both high responsivity and fast response speed simultaneously. Great prospect for commercial applications can be imagined on this bilayer device.

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Section: Resultsmentioning

confidence: 99%

Section: Band Diagram and Mechanism Explanationmentioning

confidence: 91%

Section: Band Diagram and Mechanism Explanationmentioning

confidence: 99%

See 1 more Smart Citation

Self‐Powered Broad Spectral Photodetector with Ultrahigh Responsivity and Fast Response Based on Sb₂Se₃/VO₂ Heterojunction

Xin

Jiang

et al. 2021

Adv Materials Inter

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“…The conduction band offset (CBO) is calculated by the following Equation () [ 41 ]

\begin{matrix} CBO = (VBO + E_{g}^{{SnS}_{2}}) - E_{g}^{{ZnO}_{0.7} S_{0.3}} \end{matrix}

…”

Section: Resultsmentioning

confidence: 99%

“…The Kraut's equation is used to calculate the valance band offset (VBO) of SnS 2 /ZnO 0.7 S 0.3 heterojunction. The core levels of Sn 3d 3/2 in SnS 2 and Zn 2p 3/2 in ZnO 0.7 S 0.3 are selected to calculate VBO as follow Equation () [ 41 ]

\begin{matrix} VBO = (E_{Sn 3 d_{3 / 2}}^{{SnS}_{2}} - E_{VBM}^{{SnS}_{2}}) - (E_{Zn 2 p_{3 / 2}}^{{ZnO}_{0.7} S_{0.3}} - E_{VBM}^{{ZnO}_{0.7} S_{0.3}}) - (E_{Sn 3 d_{3 / 2}}^{Heterojunction} - E_{Zn 2 p_{3 / 2}}^{Heterojunction}) \end{matrix}

where

(E_{Sn 3 d_{3 / 2}}^{{SnS}_{2}} - E_{VBM}^{{SnS}_{2}})

is the energy difference between Sn 3d 3/2 core level and VBM in SnS 2 thin film.

(E_{Zn 2 p_{3 / 2}}^{{ZnO}_{0.7} S_{0.3}} - E_{VBM}^{{ZnO}_{0.7} S_{0.3}})

is the energy difference between Zn 2p 3/2 core level and VBM in ZnO 0.7 S 0.3 thin film.…”

Section: Resultsmentioning

confidence: 99%

Self‐Powered and Broadband Photodetector Based on SnS₂/ZnO₁₋_xS_x Heterojunction

Jiang

Huang

et al. 2020

Adv Materials Inter

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is constructed by utilizing an integrated nanosystem consisting of an energy harvesting or storage unit and a light sensor. The simplified structure and maintenancefree features of the first category endow the low-cost advantage as compared with the second one. Furthermore, the heterojunction-based PDs generally possess superior performance compared with PEC and the integrated nanosystem. [10,11] In addition, the vertical heterojunction configuration is considered as one of the most essential cornerstones of high performance optoelectronic devices, which is attributed to its strong built-in electric field, the short carrier diffusion path, and the large active area. [12] Although considerable efforts have been devoted, [13-18] the reports on selfpowered broadband PDs remain limited and several challenges are to be solved. For instance, various photoactive materials and methods are applied to construct PDs, but it is still challenging to design a high performance self-powered PDs based on earth abundant materials by a facile method. In addition, several conditions need to be met for the photoactive materials: the large absorption coefficient, the superior carrier mobility, the tunable energy-level alignment with electrode for the sake of high-performance PDs. [5] Thus, it is still demanding to find suitable photoactive materials for PDs that can work at room temperature in the range from UV to NIR. Metal chalcogenides semiconductors are promising candidates for photoelectric devices owing to their specific electronic and optoelectronic properties. [19,20] Tin disulfide (SnS 2) is an indirect bandgap (2.2 eV) semiconductor, which has drawn considerable attentions owing to its advantages of low cost, earth abundance, nontoxicity, and environmental friendliness. [21] The absorption coefficient and carrier mobility is up to 10 5-10 6 cm −1 and 230 cm 2 V −1 s −1 , respectively. [5,22] SnS 2based PDs have shown superior performance, such as high on/off ratio, high responsivity, good stability, and fast response speed. [22-25] In addition, it has been proved that SnS 2 can be applied to construct a PD in the range from UV to NIR light, although it need to be powered externally. [26] Zinc oxide (ZnO), a typical n-type wide bandgap semiconductor, has already been widely applied in optoelectronic devices due to its wide bandgap and high exciton biding energy. [27-29] In addition, ZnO-based PDs are endowed the advantages of low applied field, fast response, and no oxygen dependency. [30,31] On the other hand, the doping of S atom can not only improve the optical and electrical properties of ZnO, but also modify the band structure of Self-powered photodetectors that can work without an external power source are expected to play a crucial role in future optoelectronic devices. Herein, SnS 2 /ZnO 1−x S x heterojunctions are fabricated by a facile sputtering method and constructed as self-powered broadband photodetectors covering from UV (365 nm) to NIR (850 nm). The self-powered device shows a superior responsivity of 8.28 mAW...

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A novel polyaniline/NiO nanocomposite as a UV and visible-light photocatalyst for complete degradation of the model dyes and the real textile wastewater

Taymaz

Eskizeybek

Kamış

2020

Environ Sci Pollut Res

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Valance band offset of TiO2/CuGaO2 hetero-structure measured by x-ray photoelectron spectroscopy

Cited by 19 publications

References 19 publications

Self‐Powered Broad Spectral Photodetector with Ultrahigh Responsivity and Fast Response Based on Sb₂Se₃/VO₂ Heterojunction

Self‐Powered Broad Spectral Photodetector with Ultrahigh Responsivity and Fast Response Based on Sb₂Se₃/VO₂ Heterojunction

Self‐Powered and Broadband Photodetector Based on SnS₂/ZnO₁₋_xS_x Heterojunction

A novel polyaniline/NiO nanocomposite as a UV and visible-light photocatalyst for complete degradation of the model dyes and the real textile wastewater

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Valance band offset of TiO2/CuGaO2 hetero-structure measured by x-ray photoelectron spectroscopy

Cited by 19 publications

References 19 publications

Self‐Powered Broad Spectral Photodetector with Ultrahigh Responsivity and Fast Response Based on Sb2Se3/VO2 Heterojunction

Self‐Powered Broad Spectral Photodetector with Ultrahigh Responsivity and Fast Response Based on Sb2Se3/VO2 Heterojunction

Self‐Powered and Broadband Photodetector Based on SnS2/ZnO1−xSx Heterojunction

A novel polyaniline/NiO nanocomposite as a UV and visible-light photocatalyst for complete degradation of the model dyes and the real textile wastewater

Contact Info

Product

Resources

About

Self‐Powered Broad Spectral Photodetector with Ultrahigh Responsivity and Fast Response Based on Sb₂Se₃/VO₂ Heterojunction

Self‐Powered Broad Spectral Photodetector with Ultrahigh Responsivity and Fast Response Based on Sb₂Se₃/VO₂ Heterojunction

Self‐Powered and Broadband Photodetector Based on SnS₂/ZnO₁₋_xS_x Heterojunction