Vacuum ultraviolet photovoltaic arrays

Zheng, Wei; Lin, Rijia; Jia, Lemin; Huang, Feng

doi:10.1364/prj.7.000098

Cited by 57 publications

(40 citation statements)

References 28 publications

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“…A lot of proof‐of‐concept devices incorporating 2D materials have been designed aiming at solving the conflict between critical size reduction and performance improvement of the photodetectors . There have been some impressive researches focusing on 2D UV photodetectors that involve wide bandgap semiconductors . However, most of the studies have concentrated upon the visible light detection since most of the 2D semiconductors own a moderate bandgap between 1.0 and 2.0 eV .…”

Section: Figure Of Merits For Photodetectors Based On Typical 2d Matementioning

confidence: 99%

Growth of Ultraflat PbI₂ Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

Xiao

Liang

2019

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Optoelectronic device research is experiencing a rapid development and has been attracting a great deal of attentions from both academia and industry. As one of the most important devices in optoelectronic system, photodetectors are widely used in flame and environmental monitoring, night vision, communication, and imaging ascribing to their ability to convert optical signal to electrical signal sensitively and accurately. Driven by the Moore's Law, the feature size of the highly integrated electronic devices is approaching to several nanometers level in recent years, [1,2] which makes it urgent to exploit photodetectors with equivalent size in order to construct highly integrated and compatible photodetection system. However, when the size of a photodetector is reduced to the optical diffraction limit (less than or equal to the wavelength of incident light), the performance of the photodetector would be deteriorated 2D lead iodide (PbI 2 ) is attracting great interest due to its great potential in the application of UV photodetectors. In this work, a facile solution-based method is developed to synthesize ultraflat PbI 2 nanoflakes for high-performance UV photodetectors. By maintaining at proximate room temperature and adding an evaporation suppression solvent for slow-rate crystal growth, high-quality PbI 2 nanoflakes with an ultraflat surface are obtained. The UV photodetectors based on 2D PbI 2 nanoflakes exhibit a high photoresponsivity of 0.51 A W −1 , a high detectivity of 4.0 × 10 10 Jones, a high external quantum efficiency (EQE) of 168.9%, and a rapid response speed including a rise time of 14.1 ms and a decay time of 31.0 ms. The balanced and excellent photodetector performance of these devices paves the road for practical UV photodetection based on 2D PbI 2 nanoflakes.

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Section: Figure Of Merits For Photodetectors Based On Typical 2d Matementioning

confidence: 99%

Growth of Ultraflat PbI₂ Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

Xiao

Liang

2019

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“…After the ligand‐tailoring engineering, a CVD graphene is transferred as transparent conductive layer of the device. The deposited Ti/Au (15/70 nm) electrode forms quasi‐ohmic contact with graphene 33,34. The structure diagram of device is shown in Figure a, which is a typical vertically stacked photodiode.…”

Section: Developments Of Multilayer‐stacked Duv Photodiodesmentioning

confidence: 99%

“…The deposited Ti/Au (15/70 nm) electrode forms quasi-ohmic contact with graphene. [33,34] The structure diagram of device is shown in Figure 3a, which is a typical vertically stacked photodiode. Figure 3a shows the I-V characteristics of device in dark state, indicating that the device has a good rectification effect.…”

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confidence: 99%

Ligand Tailoring Oxide Colloidal Quantum Dots for Silicon‐Integrated Ultraviolet Photodiode

Lin

Kan

Zheng

et al. 2020

Adv Elect Materials

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In the past, benefiting from the mature micro‐technologies of crystalline‐silicon (c‐Si), c‐Si electronic and optoelectronic devices have brought revolutionary convenience to daily lives, with sensitive visible and near‐infrared photodetectors, the basic device in cameras for visible spectroscopy and color imaging, as an example. However, the sensitivity of all‐Si photodetectors cannot meet the needs of deep‐ultraviolet (DUV) detection with important applications in spectral imaging analysis. Based on this circumstance, a 0D–3D silicon‐integrated photodiode is presented to obtain highly sensitive DUV detection. A vertically stacked graphene/GAO/Si back‐to‐back photodiode has high photoresponsivity (0.165 A/W and EQE ≈ 80.2% at 0 V bias, 7.42 A/W and EQE ≈ 3611% at −1 V bias) and fast response speed (3 ms) under DUV illumination by using composite modified wide‐band‐gap oxide colloidal quantum dots as the DUV sensitive layer. The performance of the detector is successfully verified by DUV imaging with a single‐point‐detection imaging system.

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“…Besides, the photocurrent increases with time under the UV on/off cycles of ZnTs/UNCD when compared to other devices (such as ZnTs, GrF-ZnTs, and GrF-ZnTs/UNCD). [26][27][28][29][30][31][32][33] In addition, excellent dispersion of GrF on surface of ZnTs potentially contributes to the high photocurrent because well-etched ZnTs surface on UNCD interlayer also enhance light absorption. Figure 8 shows the photoresponsivity curve of ZnTs, GrF-ZnTs, ZnTs-UNCD, and GrF-ZnTs/UNCD, respectively.…”

Section: Wwwadvmatinterfacesdementioning

confidence: 99%

Structural Engineering of Dispersed Graphene Flakes into ZnO Nanotubes on Discontinues Ultra‐Nanocrystalline Diamond Substrates for High‐Performance Photodetector with Excellent UV Light to Dark Current Ratios

Huang

Saravanan

2019

Adv Materials Inter

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In this work, ultraviolet (UV) photodetectors based on ultra‐nanocrystalline diamond (UNCD) and dispersed graphene flakes (GrF) with ZnO nanotubes (ZnTs) heterostructures are investigated. Unique hybrid nanostructure of dispersed GrF into ZnTs on discontinuous UNCD substrates using scalable techniques is presented. It is revealed from microstructural analysis that the addition of GrF into highly uniform ZnTs grown on UNCD substrates results outstanding UV photodetection properties. Thus, the GrF‐ZnTs/UNCD nanostructure reveals superior UV diode performance, with an ultrahigh UV switching ratio of 19 708 at 5 V, which is excellently better than those of ZnO nanostructures. It is perceived that the perfect distribution of GrF into ZnTs on UNCD substrates results in ultrafast electron–hole recombination. The distribution of GrF and UNCD interlayer enables the new energy levels on the conduction band, which reduces the barrier height to allow fast charge carrier transportation during the UV illumination. It is believed that the addition of GrFs and UNCD layer increase the UV adsorptivity and sufficient amount of conducting path within ZnTs. Therefore, the present GrF‐ZnTs/UNCD photodetector can be used as an efficient UV photodetection device with high performance and opening up new opportunities for future optoelectronic devices.

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Vacuum ultraviolet photovoltaic arrays

Cited by 57 publications

References 28 publications

Growth of Ultraflat PbI₂ Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

Growth of Ultraflat PbI₂ Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

Ligand Tailoring Oxide Colloidal Quantum Dots for Silicon‐Integrated Ultraviolet Photodiode

Structural Engineering of Dispersed Graphene Flakes into ZnO Nanotubes on Discontinues Ultra‐Nanocrystalline Diamond Substrates for High‐Performance Photodetector with Excellent UV Light to Dark Current Ratios

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Vacuum ultraviolet photovoltaic arrays

Cited by 57 publications

References 28 publications

Growth of Ultraflat PbI2 Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

Growth of Ultraflat PbI2 Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

Ligand Tailoring Oxide Colloidal Quantum Dots for Silicon‐Integrated Ultraviolet Photodiode

Structural Engineering of Dispersed Graphene Flakes into ZnO Nanotubes on Discontinues Ultra‐Nanocrystalline Diamond Substrates for High‐Performance Photodetector with Excellent UV Light to Dark Current Ratios

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Growth of Ultraflat PbI₂ Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors

Growth of Ultraflat PbI₂ Nanoflakes by Solvent Evaporation Suppression for High‐Performance UV Photodetectors