1983
DOI: 10.1116/1.571925
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Vacuum ultraviolet driven chemical vapor deposition of localized aluminum thin films

Abstract: Incoherent vacuum ultraviolet (VUV) light has been used to deposit aluminum from photodissociated trimethylaluminum vapor at room temperature. The depositions of aluminum on quartz, silicon, and sapphire show distinct patterns of the shadow mask that was used to shield areas of the substrate from the VUV light beam. Because of its simplicity and low cost, this new method may provide an attractive alternative to presently used methods for depositing metals, semiconductors, and insulators.

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Cited by 33 publications
(9 citation statements)
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“…570 For strictly BEOL applications, photo-assisted depositions of both metals and low- dielectrics have been explored over the past two decades. Specifically, photo-assisted CVD 497,571 and ALD 572,573 of important interconnect metals such as Al, 574,575 W, 576 and Cu 513 and photo-assisted electroplating (EP) of Cu 577 have been reported. In some cases, selective are photo-CVD processes have also been reported for Al, Cu, and W. 578 However, neither photoassised CVD or EP have yet to supplant the current PVD, CVD, and EP methods utilized to deposit these metals in BEOL interconnect fabrication.…”
Section: V32 Uv-assisted Film Depositionmentioning
confidence: 99%
“…570 For strictly BEOL applications, photo-assisted depositions of both metals and low- dielectrics have been explored over the past two decades. Specifically, photo-assisted CVD 497,571 and ALD 572,573 of important interconnect metals such as Al, 574,575 W, 576 and Cu 513 and photo-assisted electroplating (EP) of Cu 577 have been reported. In some cases, selective are photo-CVD processes have also been reported for Al, Cu, and W. 578 However, neither photoassised CVD or EP have yet to supplant the current PVD, CVD, and EP methods utilized to deposit these metals in BEOL interconnect fabrication.…”
Section: V32 Uv-assisted Film Depositionmentioning
confidence: 99%
“…Also shown in Figure 6 are calculated rates, for several species (M = Ar, H2, C02, CH4). Relaxation by He was not calculated since it is less efficient as a quencher than H2.31 Self-relaxation by CO CO(f) + CO(O) -> CO(u-l) + CO(O) (16) is not efficient under the present conditions.20•28 For C02 and CH4 the processes considered were V-V transfer, specifically CO(u) + C02(000) -* CO(u-l) + CO2(100)…”
Section: Discussionmentioning
confidence: 99%
“…There are no Al(CH 3 ) + ions present because the energy of the UV light generated by the D 2 arc lamp is insufficient to ionize TMA (ionization energy ≈ 9 eV). 32,39 To investigate the dependence of the Al film growth on the UV photolysis of TMA, the following experiment was performed. Carboxylic acid-terminated SAMs were exposed to 1500 L TMA under UV irradiation at TMA pressures from 5 × 10 −7 Torr to 1 × 10 −5 Torr.…”
Section: Effect Of Uv Exposure On Sam Chemistry While Uv Photolysis O...mentioning
confidence: 99%