Vacuum properties of a new panel structure for field emission displays

Cho, Y. R.; Kim, H. S.; Mun, Je-Do; Oh, Jihyun; Jeong, Hee-Won; Ahn, Sung-Ho

doi:10.1116/1.590344

Cited by 8 publications

(4 citation statements)

References 2 publications

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“…Consequently, the growth rate decreases, because it is directly proportional to the coverage in the weakly-adsorbed state. This is typical for epitaxial growth of crystalline silicon [24]. The growth precursors adsorb on terraces on the surface and diffuse to surface steps, where they are trapped, promoting film growth.…”

Section: Growth Via An Adsorbed Layermentioning

confidence: 99%

Surface processes during thin-film growth

Keudell

2000

Plasma Sources Sci. Technol.

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The growth of thin films from low-temperature plasmas plays an important role in many applications such as optical or wear-resistant layers or for the fabrication of electronic devices. Albeit of great importance, the underlying growth mechanisms responsible for film formation from low-temperature plasmas are not well known. The direct identification of a growth mechanism is often hampered by the huge complexity of the bulk plasma processes and the plasma-surface interaction. The distribution of impinging species is very diverse, and ions, radicals and neutrals are interacting simultaneously with the growing film surface. A macroscopic quantity such as the growth rate can be the result of possible synergisms and anti-synergisms among a large variety of growth precursors. Due to the broad range of plasma-deposited materials as well as deposition methods, the objective of this paper is not to review them all, but to present a basic overview on the elementary surface mechanisms of radicals and ions. On the basis of these surface reactions, typical growth models will be discussed. As an example, for surface processes during thin-film growth, the current deposition models for amorphous hydrogenated carbon and silicon films are presented.

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Section: Growth Via An Adsorbed Layermentioning

confidence: 99%

Surface processes during thin-film growth

Keudell

2000

Plasma Sources Sci. Technol.

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“…By assuming a panel that is closed at one FIGURE 7.32. Pressure vs. pump time for a conventional 5.7 diagonal panel and a panel with an auxiliary tank in which the baseplate has one and four pump holes of 5-mm in diameter [65]. Note that the pressure unit of mbar is used.…”

Section: Vacuum Requirements Although Crts Can Operate At Pressure Omentioning

confidence: 99%

“…To increase pumping efficiency, a panel structure with an auxiliary tank as shown in Fig. 7.30 was investigated [65]. Several pumping holes are fabricated in the baseplate, and the device is evacuated through an exhaust tube that is positioned at the back of the auxiliary tank.…”

Section: Vacuum Requirements Although Crts Can Operate At Pressure Omentioning

confidence: 99%

Field Emission Flat Panel Displays

Busta¹

2001

Vacuum Microelectronics

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“…2.56 desconsidera as paredes que estão representadas verticalmente na. Fig, 2.15 ~este trabalho será considerado que a melhor configuração de bombeamento, dentro do esquema convencional, é aquela proposta por Cho [89], em que o bombe .. amento é feito por duas fendas posicionadas em lados opostos do dispositivo, como mostrado na Fig. 2.18, numa vista superior.…”

Section: Cálculo Da Condutância De Vácuounclassified

Novos processos e configurações para mostradores planos de informação

Mammana¹

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Oue of the most important challenges to the electronks índustry i5 the production of a fiat panel display which fulfills the requirements of high quaiíty irnage 1 large area t low power and low cost. Field Emission Display (FED) is the technoJogy in best oonditions to face these l'cquirements, However, the short lifetime and low reiiability of FED prototypes based ou metaUíc ernitters are hindering this technology to get iuto the market. In this work we investigate two different approaches that could represent a solution for these problems: improvement of the vacuum cha racterístics inside the emission cbamber and use of carbon nanotubes as emitters. With respect to the improvement af vacumn ín a FED, this work proposes a new type of emitter based on a porous díamond membrane. Theoretical calcu)ations referent to the vacuum properties and referent to ele<::trostatic field enhancement fador are presented. A new mode! is proposed to determine the superior limit for the eletrostatic field enhancement fador in a porous emitter. With respect to tbe experimental part of this work, we show that diamond porous membranes indeed emit eledrons, according to the original proposition. The emission performance of these membranes is oompared to the performance of flat metalic emitters: coated or not with diamond-like carbon. Images of emissiôn spôts in pores and a study of the long term membrane emission stabiHty are presented. \Vith respect to carbon nanotubes, thls work presents a new treatment process! under plasma are) that re sulted in emission improvement. A study 011 emission stability of nanotubes ia a150 presented) and systematical emission decay is reporte

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Vacuum properties of a new panel structure for field emission displays

Abstract: Process design and emission properties of gated n + polycrystalline silicon field emitter arrays for flat-panel display applications

Cited by 8 publications

References 2 publications

Surface processes during thin-film growth

Surface processes during thin-film growth

Field Emission Flat Panel Displays

Novos processos e configurações para mostradores planos de informação

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