2014
DOI: 10.1088/1742-6596/505/1/012018
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Vacancy type defect formation in irradiated α-iron investigated by positron beam Doppler broadening technique

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Cited by 9 publications
(4 citation statements)
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“…They did not fi t them but the difference between approximated values of S parameter for surface and saturation are comparable. Similar agreement occurs in the case of investigations provided by He et al [9]. In this case, authors fi tted obtained profi le using VEPFIT [10] getting L + = 160 ± 2 nm.…”
Section: Example Of Pas Resultssupporting
confidence: 88%
“…They did not fi t them but the difference between approximated values of S parameter for surface and saturation are comparable. Similar agreement occurs in the case of investigations provided by He et al [9]. In this case, authors fi tted obtained profi le using VEPFIT [10] getting L + = 160 ± 2 nm.…”
Section: Example Of Pas Resultssupporting
confidence: 88%
“…In the fitting, next to the mentioned A and n, Makhov's parameter m = 1.766 has been used. Positron diffusion length L + , obtained for the reference sample, equals 158 ± 2 nm and it is in a perfect agreement with the one obtained for the defect-free Fe structure [25]. Shortening of L + to only 1 nm proves the existence of open-volume defects with high concentration.…”
Section: Vep Experimentssupporting
confidence: 85%
“…He ions may form complexes 32 by combining with the irradiation induced vacancies that are mostly formed in 400–800 nm region. In addition, C, Mn, Ni and Mo present in the alloy may also form complexes with irradiation generated vacancies, as these elements have favorable energetics for the formation of ion-vacancy complexes 33 , 34 . The S-parameter for such ion-vacancy complex is lower than that for an isolated vacancy defect 32 , 34 .…”
Section: Resultsmentioning
confidence: 99%
“…In addition, C, Mn, Ni and Mo present in the alloy may also form complexes with irradiation generated vacancies, as these elements have favorable energetics for the formation of ion-vacancy complexes 33 , 34 . The S-parameter for such ion-vacancy complex is lower than that for an isolated vacancy defect 32 , 34 . At 77 K temperature, since irradiation induced vacancies are nearly immobile, they got arrested within the region of formation i.e.…”
Section: Resultsmentioning
confidence: 99%