Vacancy‐Induced Synaptic Behavior in 2D WS₂ Nanosheet–Based Memristor for Low‐Power Neuromorphic Computing

Abstract

Memristors with nonvolatile memory characteristics have been expected to open a new era for neuromorphic computing and digital logic. However, existing memristor devices based on oxygen vacancy or metal‐ion conductive filament mechanisms generally have large operating currents, which are difficult to meet low‐power consumption requirements. Therefore, it is very necessary to develop new materials to realize memristor devices that are different from the mechanisms of oxygen vacancy or metal‐ion conductive filaments to realize low‐power operation. Herein, high‐performance and low‐power consumption memristors based on 2D WS2 with 2H phase are demonstrated, which show fast ON (OFF) switching times of 13 ns (14 ns), low program current of 1 µA in the ON state, and SET (RESET) energy reaching the level of femtojoules. Moreover, the memristor can mimic basic biological synaptic functions. Importantly, it is proposed that the generation of sulfur and tungsten vacancies and electron hopping between vacancies are dominantly responsible for the resistance switching performance. Density functional theory calculations show that the defect states formed by sulfur and tungsten vacancies are at deep levels, which prevent charge leakage and facilitate the realization of low‐power consumption for neuromorphic computing application.

A Pure 2H‐MoS2 Nanosheet‐Based Memristor with Low Power Consumption and Linear Multilevel Storage for Artificial Synapse Emulator

“…Therefore, the proposed device can accurately simulate the STDP rule. Paired‐pulse facilitation (PPF) represents the total input time of a biological synapse 44–46. A typical PPF waveform is shown in Figure S9b, Supporting Information.…”

Chemical vapor deposition synthesis of two-dimensional freestanding transition metal oxychloride for electronic applications

“…As shown in Figure 4(f), the resistance of VOCl based memristive device gradually shows an increase or a reduction with consecutive negative (−1.15 V, 500 µs) or positive (1.6 V, 50 µs) voltage pulses, respectively. This suggests that our VOCl based memristors have potential applications in neuromorphic computing [48,[52][53][54][55][56][57].…”

Compacted Self‐Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors

“…Because of the gradually change in current–voltage characteristics at both bias polarities of the Gd x O y memristors with H 2 plasma surface modified CSA graphene BEs, as shown in Figure 4a, a superior adoptability of the devices in artificial synapse is expected. [ 41,63,64 ] Consequently, the basic biomimetic characteristics of potentiation, depression, and spike‐timing‐dependent plasticity (STDP) for the Gd x O y memristors with CSA graphene BEs were measured and are presented in Figure . Figure 6a,b shows the potentiation and depression processes of the Gd x O y memristors with a pristine and a 10 min H 2 plasma surface modified CSA graphene BEs, respectively.…”