Vacancy–indium clusters in implanted germanium

Chroneos, Alexander; Kube, R.; Bracht, H.; Grimes, Robin W.; Schwingenschlögl, Udo

doi:10.1016/j.cplett.2010.03.005

Cited by 15 publications

(13 citation statements)

References 32 publications

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“…Following atomistic calculations on the stability of In n V m clusters, it is very likely that such clusters mainly exist in the high concentration region. 26 During annealing, these clusters dissolve and act as source for mobile In-related defects that penetrate into the bulk and transform to substitutional In. Other profiles representing intrinsic and extrinsic diffusion are displayed in Figs.…”

Section: Resultsmentioning

confidence: 99%

Intrinsic and extrinsic diffusion of indium in germanium

Kube

Bracht

Chroneos

et al. 2009

Journal of Applied Physics

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Diffusion experiments with indium ͑In͒ in germanium ͑Ge͒ were performed in the temperature range between 550 and 900°C. Intrinsic and extrinsic doping levels were achieved by utilizing various implantation doses. Indium concentration profiles were recorded by means of secondary ion mass spectrometry and spreading resistance profiling. The observed concentration independent diffusion profiles are accurately described based on the vacancy mechanism with a singly negatively charged mobile In-vacancy complex. In accord with the experiment, the diffusion model predicts an effective In diffusion coefficient under extrinsic conditions that is a factor of 2 higher than under intrinsic conditions. The temperature dependence of intrinsic In diffusion yields an activation enthalpy of 3.51 eV and confirms earlier results of Dorner et al. ͓Z. Metallk. 73, 325 ͑1982͔͒. The value clearly exceeds the activation enthalpy of Ge self-diffusion and indicates that the attractive interaction between In and a vacancy does not extend to third nearest neighbor sites which confirms recent theoretical calculations. At low temperatures and high doping levels, the In profiles show an extended tail that could reflect an enhanced diffusion at the beginning of the annealing.

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Section: Resultsmentioning

confidence: 99%

Intrinsic and extrinsic diffusion of indium in germanium

Kube

Bracht

Chroneos

et al. 2009

Journal of Applied Physics

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“…111 DFT calculations in conjunction with mass action analysis concluded that PþAs doping is a way to engineer the active donor concentrations. 111 This inspired the experimental work of Tsouroutas et al, 16 which concluded that although there is a retardation of the As diffusion (note P has a higher activation energy of diffusion than As 46,48 ), the activation level of the PþAs samples is typically lower compared to the singly doped samples.…”

Section: Double Donor Atom Dopingmentioning

confidence: 96%

“…45 A plausible explanation is that in high indium concentration regions In n V m clusters form. 46 Experimental and theoretical studies on donor diffusion have established that n-type dopants (A ¼ P, As, Sb) diffuse in Ge via a vacancy mechanism at a faster rate than selfdiffusion 36,37,[47][48][49] (see Fig. 1).…”

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confidence: 99%

Diffusion ofn-type dopants in germanium

Chroneos¹,

Bracht²

2014

Applied Physics Reviews

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“…Finally, for heavily indium-doped Ge the SIMS concentration-depth profiles revealed [48] that a high proportion of the indium dose ($ 16%) is trapped in a characteristic hump. In a recent DFT investigation it is proposed that in high indium concentration regions In n V m clusters can be formed [49]. These clusters are important as it is possible that they dissolve during annealing acting as a source of mobile vacancies [49].…”

Section: P-type Dopantsmentioning

confidence: 99%