2022
DOI: 10.1016/j.apcatb.2022.121109
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Vacancy-defect semiconductor quantum dots induced an S-scheme charge transfer pathway in 0D/2D structures under visible-light irradiation

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Cited by 67 publications
(31 citation statements)
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References 56 publications
(66 reference statements)
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“…This indicated that bi-sources of Zn and the ligand aided in the construction of more defective interfaces in C–ZnO 0.5 /ZAA foam, which was shown to have a high redox ability when compared to pure ZnO and ZIF-8. 103,104 Based on the above photo-electric performance analysis, C–ZnO 0.5 /ZAA foam had enhanced photo-absorption, photo-induced electrons, conductivity, and redox ability, endowing C–ZnO 0.5 /ZAA foam with efficient photocatalysis-assisted regeneration.…”
Section: Resultsmentioning
confidence: 97%
“…This indicated that bi-sources of Zn and the ligand aided in the construction of more defective interfaces in C–ZnO 0.5 /ZAA foam, which was shown to have a high redox ability when compared to pure ZnO and ZIF-8. 103,104 Based on the above photo-electric performance analysis, C–ZnO 0.5 /ZAA foam had enhanced photo-absorption, photo-induced electrons, conductivity, and redox ability, endowing C–ZnO 0.5 /ZAA foam with efficient photocatalysis-assisted regeneration.…”
Section: Resultsmentioning
confidence: 97%
“…Moreover, oxygen defects may be generated to speed up the separation of photogenerated carriers during the modification of g-C 3 N 4 by oxide QDs. [89][90][91] Based on these advantages, oxide QDs/g-C 3 N 4 composites are more used in environmental fields for the treatment of pollutants. Similarly, vanadate QDs with wide energy bandgaps and likely oxygen vacancies can also form heterojunction with g-C 3 N 4 , resulting in better photocatalytic performance.…”
Section: Classifications Of Qds/g-c 3 N 4 Compositesmentioning
confidence: 99%
“…Both forms were efficiently separated and restrained the recombination of photogenerated e − -h + pairs. [56,90,93,117]…”
Section: Tighter Interface Contactmentioning
confidence: 99%
“…The CSZS-V Zn heterojunction exhibited a H 2 evolution rate of 46.63 mmol h −1 g −1 under visible light illumination in an aqueous Na 2 S/Na 2 SO 3 system, which was about 388 and 1727 times higher than those of CdS and Zn-vacancy ZnS, respectively. Bi et al 127 successfully fabricated a novel 0D/2D TiO 2 /g-C 3 N 4 S-type heterostructure with vacancy defects using a multi-step assembly strategy. The vacancy defect TiO 2 quantum dots can form an S-shaped charge transfer path in TiO 2 -O V /g-C 3 N 4 , which greatly improved the redox ability of carriers, enhanced the charge transfer and separation on the interface, and promoted the adsorption and dissociation of water.…”
Section: Engineering Of Heterojunction Interfacementioning
confidence: 99%