Vacancy defect mobilities and binding energies obtained from annealing studies

First-Principles Study of the Stability and Interfacial Bonding of Tilt and Twist Grain Boundaries in Al and Cu

“…Note that defect energies and surface energies are generally larger in Cu than in Al. For example, the vacancy formation energy is experimentally 1.03 eV, 26) 1.19 eV, 27) or 1.30 eV 28) for Cu, in contrast to 0.68 eV for Al (52{66% of Cu), 29) which are well reproduced by recent ab initio calculations. 6,7,30) Recent ab initio calculations also indicate that the surface energy of Cu (110) is 0.901 eV per surface atom in contrast to 0.708 eV (78%) for Al(110).…”

Kinetics of precipitation and of relaxation of precipitation-induced stresses in aluminium-silicon alloys

“…For the three alloys considered the following average value of the activation energy for precipitation is found: (5)), wher~ large amounts of excess vacancies are present at the start of precipitation. The activation energy for precipitation found here is close to the sum of the energy for formation and for migration of a vacancy in aluminium (7). Apparently, in the (present) solid-quenched AISi alloys a much lower concentration of excess vacancies is present than in liquid-quenched AISi alloys (but see also Ref.…”

Vacancy formation in homoepitaxially grown Ag films and its effect on surface morphology

“…First, it should be noted that the large negative volume of a vacancy is necessary in order to explain the relatively large compressive strain. Second, the observed annealing of the line shape by warming to 300 K is consistent with vacancies: radiation damage studies of bulk Ag show that vacancies anneal at 260 K. 18 Finally, computer simulations of low-T metal homoepitaxy have predicted that vacancies or internal voids ͑vacancy clusters͒ can be incorporated into a growing film. 7 The concentration of vacancies can be estimated from the measured strain.…”