2020
DOI: 10.1016/j.jnucmat.2020.152329
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Vacancy and interstitial interactions with crystal/amorphous, metal/covalent interfaces

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Cited by 4 publications
(2 citation statements)
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“…Suzuki and Mishin 62 calculated the formation energy of vacancies and interstitials at several grain boundaries in Cu and Al and showed low formation energies at grain boundaries compared to the bulk. Using atomistic simulations in Au|Si interface, Navale and Demkowicz 63 showed that the formation energies of both point defects, i.e., vacancies and interstitials, are lower near the interface than in bulk. Our results shown in Figure 10 agree with these previous works illustrating that the vacancy formation energies are lower at the interfaces.…”
Section: ■ Resultsmentioning
confidence: 99%
“…Suzuki and Mishin 62 calculated the formation energy of vacancies and interstitials at several grain boundaries in Cu and Al and showed low formation energies at grain boundaries compared to the bulk. Using atomistic simulations in Au|Si interface, Navale and Demkowicz 63 showed that the formation energies of both point defects, i.e., vacancies and interstitials, are lower near the interface than in bulk. Our results shown in Figure 10 agree with these previous works illustrating that the vacancy formation energies are lower at the interfaces.…”
Section: ■ Resultsmentioning
confidence: 99%
“…Indeed, previous studies revealed the propensity of Si 12,13 and similar SiC alloys 21 to undergo amorphization upon irradiation and heating. Only recently have work by Navale and Demkowicz 22 begin to explore the radiation tolerance and defect-sink properties for this type of covalent-metal interfaces. Additionally, the mechanical performance of these nanocomposites remains an under-explored subject, with works by several research groups 23,[24][25][26] , all focusing on a single bulk Si phase.…”
mentioning
confidence: 99%