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A melt clusterization within the interfacial boundary layer and its hydrodynamics modelling at the microgravity semiconductor single crystal growth

“…During crystallization in conditions maximum close to weightlessness and under growth near to diffusion-controlled mode, the transient region thickness in semiconductor melt can achieve 3-6 mm [12][13][14]. The purposeful study of the melts state in space has not been performed yet.…”

Melt Structural Self-Organization and Viscosity within the Transient Layer during a Single Crystal Growth in Microgravity

“…Zero-gravity is an ideal unperturbed environment for study of fundamental phase transition mechanisms under conditions where the uncontrolled influence of any external forces upon the crystallization system is extremely low. During crystallization in the conditions maximum close to weightlessness and under growth near to diffusion-controlled mode, the transient delta-layer thickness in a semiconductor melt can achieve 3÷6 mm [1][2][3][4]. Since the melt structuring phenomena in the transient layer are extremely susceptible to exposure to any energy, like thermal, mechanical (mixing, vibration), electromagnetic, gravity forces etc., the ideal environment for their revealing and study is the microgravity state aboard an orbital vehicle.…”

“…Since the melt structuring phenomena in the transient layer are extremely susceptible to exposure to any energy, like thermal, mechanical (mixing, vibration), electromagnetic, gravity forces etc., the ideal environment for their revealing and study is the microgravity state aboard an orbital vehicle. Firstly the analysis was performed of the effect of gravitational modes of Mir station's orbital flight upon the Float Zone Melting of Ge used as an example [5,6]. It was experimentally shown that the non-stationary thermo-gravitational convection in a melt will only become negligible when the microgravity level is 4×10 -6 of its on-theground value (g 0 ) or less.…”