V<sub>TH</sub> &amp; G<sub>m, max</sub> Instability Analysis of the Multiple GaN Chips based Cascode Power Module

Elangovan, Surya; Cheng, Stone; Yao, Jiahao; Chang, Edward Yi

doi:10.1109/ipfa55383.2022.9915768

Cited by 2 publications

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“…An AlGaN/GaN heterostructure on a 300 µm-thick Si substrate using MOCVD , which will be used as the active layer in a GaN MIS-HEMT device. The process and construction techniques are similar to those described in previous reports [26,27]. Figure 1 demonstrates the cross-section of the fabricated GaN MIS-HEMT (a) microscopic view and (b) schematic view in this work.…”

Section: Algan/gan D-mode Mis-hemtmentioning

confidence: 88%

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Elangovan

Cheng

Jang

et al. 2023

Semicond. Sci. Technol.

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A cascode gallium nitride (GaN) switch integrating four paralleled GaN depletion-mode metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMT) and a silicon MOSFET (Si-MOSFET) is presented. Each GaN chip is wire-bonded into a multi-chip power module to scale up the power rating. An optimized symmetric configuration and wire bonding of an integral package are used in the cascode switch. By utilizing an optimized packaging approach, the performance of the multi-GaN-chip cascode switch was evaluated through both static and dynamic characterizations. The constructed cascode switch provides a low-static on-state resistance of 72 mΩ and an off-state blocking capability of 400 V with a positive threshold voltage of 2 V. Analysis of dynamic switching characteristics are discussed and demonstrates stable dynamic on-state resistance (RDS-ON) in inductive load circuits with switching dependencies of voltage, frequency, time, and temperature. The extended defects from buffer caused a minimal decrease in dynamic and static RDS-ON with respect to hard switching conditions. However, there was no noticeable degradation in RDS-ON under harsh switching conditions. This study provides a complete analysis of the multi-GaN-chip cascode switch, including MIS-HEMT manufacturing, cascode packaging and static and dynamic characterizations.

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Section: Algan/gan D-mode Mis-hemtmentioning

confidence: 88%

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Elangovan

Cheng

Jang

et al. 2023

Semicond. Sci. Technol.

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“…As part of the device-level stability analysis, trapping-related instabilities were examined under a specific constant bias, e.g., constant gate bias, constant drain bias, etc. In our earlier studies [6], pulsed, and prolonged gate bias or bias temperature instability are reported. In this paper, a 400 V power module which consists of two switching elements that connect multi-GaN-chips (four GaN chips) with low voltage Si MOSFETs in series is implemented for system-level stability under hard switching conditions, which is shown in Fig 1.…”

mentioning

confidence: 97%

Dynamic on-state resistance instability characterization of a Multi-chip-GaN MIS-HEMTs Cascode power module

Elangovan

Cheng

Jang

et al. 2023

Preprint

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The dynamic on-state resistance instability of a high-current cascode multi-GaN-chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The presented double pulse test (DPT) topology is utilized to evaluate switching dependencies on voltage, current, and frequency, showing its versatility in investigating the switching instability of the device. The extended defects in the buffer layer resulted in a decrease in dynamic on-state resistance (RDS-ON) under hard switching conditions. Despite this, no noticeable RDS-ON degradation occurs under harsh switching conditions due to electron de-trapping. This study comprehensively analyzes the dynamic stability of a multi-GaN-chip cascode module with devices.

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V_TH & G_{m, max} Instability Analysis of the Multiple GaN Chips based Cascode Power Module

Cited by 2 publications

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Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Dynamic on-state resistance instability characterization of a Multi-chip-GaN MIS-HEMTs Cascode power module

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VTH & Gm, max Instability Analysis of the Multiple GaN Chips based Cascode Power Module

Cited by 2 publications

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Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Dynamic on-state resistance instability characterization of a Multi-chip-GaN MIS-HEMTs Cascode power module

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V_TH & G_{m, max} Instability Analysis of the Multiple GaN Chips based Cascode Power Module