V ions implanted ZnO nanorod arrays for photoelectrochemical water splitting under visible light

Cai, Li; Ren, Feng; Wang, Meng; Cai, Guangxu; Chen, Yubin; Liu, Yichao; Shen, Shaohua; Guo, Liejin

doi:10.1016/j.ijhydene.2014.11.114

Cited by 77 publications

(35 citation statements)

References 37 publications

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“…6. Synthesis of cobalt-doped ZnO nanorod-arrays.-The growth solution was prepared by adapting a recently reported solution based method.…”

Section: Methodsmentioning

confidence: 99%

“…3 The steadily growing research areas of solar water splitting and photo-catalysis are prominent examples of areas where interest in ZnO-based materials and devices may be found. [4][5][6][7][8][9][10][11] For these applications the nature of the semiconductor/electrolyte interface plays a crucial role. It is of the highest importance to carefully engineer the materials properties in order ensure effective charge carrier transport across the interface.…”

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confidence: 99%

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ZnO Nanorod-Arrays as Photo-(Electro)Chemical Materials: Strategies Designed to Overcome the Material's Natural Limitations

Kegel

Povey

Pemble

2017

J. Electrochem. Soc.

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The urgent need for clean and storable energy drives many currently topical areas of materials research. Among the many materials under investigation zinc oxide is one of the most studied in relation to its use in photo-(electro)chemical applications. This study aims to give an overview of some of the main challenges associated with the use of zinc oxide for these applications: the high density of intrinsic defects which can lead to fast recombination, low visible light absorption and the occurrence of photo-corrosion. Employing simple low-temperature solution based methods; it is shown how defect-engineering can be used to increase the photoelectrochemical performance and how doping can strongly increase the visible light absorption of zinc oxide nanorod-arrays. Furthermore the deposition of ultra-thin titanium dioxide layers using atomic layer deposition is investigated as possible route for the protection of zinc oxide against photo-corrosion. As one of the most studied metal-oxides Zinc Oxide (ZnO) has already found its way into many industrial applications. Nevertheless enormous research interest is still focused on this earth-abundant, environmentally-friendly material as it offers interesting material properties such as a high exciton binding energy, a direct bandgap and comparably high charge carrier mobility.1 Furthermore the ability to grow ZnO nanostructures using a wide range of deposition techniques offers new perspectives for the material to be used in opto-electronics. Low-temperature solution based methods are of particular interest as possible routes to the low-cost growth of high surface-area nanostructures for the integration of ZnO into novel energy production and storage devices. The steadily growing research areas of solar water splitting and photo-catalysis are prominent examples of areas where interest in ZnO-based materials and devices may be found. [4][5][6][7][8][9][10][11] For these applications the nature of the semiconductor/electrolyte interface plays a crucial role. It is of the highest importance to carefully engineer the materials properties in order ensure effective charge carrier transport across the interface. In turn it must be the goal of materials research to tailor the ZnO toward these target applications, where possible addressing the key issues of:Low visible-light absorption.-Since ZnO exhibits a large bandgap (ca. 3.3 eV) only a small fraction of sunlight is absorbed thus dramatically hindering the use of ZnO for photo-(electro)chemical applications. A common strategy to change the electronic structure of a semiconductor is the introduction of dopants into the host material. In the case of ZnO the material has been doped with various elements whereby many studies focus on doping with transition metals (TMs) such as nickel, magnesium, iron or cobalt.7,12-17 Historically, research focused on transition metal doping has been fueled by the possible creation of ferromagnetism in these materials -especially in the case of cobalt doping. 12,15,[18][19][20][21] On the other h...

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“…6. Synthesis of cobalt-doped ZnO nanorod-arrays.-The growth solution was prepared by adapting a recently reported solution based method.…”

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

ZnO Nanorod-Arrays as Photo-(Electro)Chemical Materials: Strategies Designed to Overcome the Material's Natural Limitations

Kegel

Povey

Pemble

2017

J. Electrochem. Soc.

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“…In this regard, ZnO, a transparent semiconducting oxide with a large exciton binding energy (60 meV) and high carrier mobility, has attracted an extensive interest . Nevertheless, its performances are detrimentally affected by its wide band gap ( E G = 3.3 eV), limiting radiation absorption to the UV interval (≈5% of the overall solar spectrum), and by the rapid charge carriers recombination . To tackle these obstacles and extend the system photoresponse into the vis range, various investigators have focused on doping with substitutional elements to the Zn and O sites .…”

Section: Introductionmentioning

confidence: 99%

“…Nevertheless, its performances are detrimentally affected by its wide band gap ( E G = 3.3 eV), limiting radiation absorption to the UV interval (≈5% of the overall solar spectrum), and by the rapid charge carriers recombination . To tackle these obstacles and extend the system photoresponse into the vis range, various investigators have focused on doping with substitutional elements to the Zn and O sites . Appreciable efforts have also been devoted to the coupling of ZnO with other suitable semiconductors, with the aim of tailoring their interfacial energetics to the targeted photoactivated processes .…”

Section: Introductionmentioning

confidence: 99%

Vapor Phase Fabrication of Nanoheterostructures Based on ZnO for Photoelectrochemical Water Splitting

Barreca

Carraro

Gasparotto

et al. 2017

Adv Materials Inter

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especially in nanostructured forms in order to attain improved system performances. [11,20,26,32] In this regard, ZnO, a transparent semiconducting oxide with a large exciton binding energy (60 meV) and high carrier mobility, has attracted an extensive interest. [5,15,18,[32][33][34] Nevertheless, its performances are detrimentally affected by its wide band gap (E G = 3.3 eV), [3,14,[35][36][37][38][39] limiting radiation absorption to the UV interval (≈5% of the overall solar spectrum), [1,2,38,[40][41][42][43] and by the rapid charge carriers recombination. [33,[35][36][37]44] To tackle these obstacles and extend the system photo response into the vis range, [1,15,39] various investigators have focused on doping with substitutional elements to the Zn and O sites. [3,21,32,40,41,43] Appreciable efforts have also been devoted to the coupling of ZnO with other suitable semiconductors, with the aim of tailoring their interfacial energetics to the targeted photoactivated processes. [2,22,27,36,45,46] In this regard, various heterojunctioncontaining composites based on ZnO-TiO 2 , [8] ZnO-NiO, [31] ZnOCdS, [11] ZnO-CdSe, [34] ZnO-CdTe, [43] ZnO-M(OH) x with M = Co, Ni, [16] ZnO-BiVO 4 , [42] ZnO-WO x coupled with CdSe-CdS, [45] ZnO-ZnS-FeS 2 , [39] and ZnO-CdS-NiO [17] have been developed and tested for solar-driven H 2 O splitting. In this broad scenario, an attractive option involves the use of Fe 2 O 3 and WO 3 as functional activators of ZnO systems for the fabrication of vis-light absorbing photoanodes. In particular, Fe 2 O 3 , an abundant and cheap oxide with a narrow band gap (E G = 2.2 eV), [9,26,28,35] has gained a considerable attention, but its sluggish oxygen evolution kinetics, low carrier lifetime, and short exciton diffusion

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“…For example, Wang et al reported that Cu ion implantation can effectively increase optical absorption and PEC performance of ZnO in visible region . Moreover, implanting V into ZnO can result in expanding its visible absorption . Generally, high dose metal‐ion implantation may induce metal nanoparticles near the surface of the target materials.…”

Section: Optical Applications Of Ion Implantationmentioning

confidence: 99%

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

Zhan

Song

et al. 2019

Small

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properties because of their special struc ture. When the materials reach a nano meter size, the electrical, optical, magnetic, and other properties of the materials will be altered greatly because of the small size effect, quantum size effect, sur face and boundary effects, and Coulomb blockade effect. [1] Currently, nanomaterials have been widely applied in many fields, including computers, catalysis, sensors, energy, and environmental protection. [2][3][4][5][6][7][8][9][10][11] As the demand increases, people aspire to fabricate nanomaterials with greater prop erties. Many methods have been used to improve the properties of nanomaterials, including doping, surface reconstruc tion, semiconductor composite, and metal nanoparticle embedding. [12][13][14][15][16][17][18][19][20] These days, ion beam techniques, including ion implantation, irradiation, and focused ion beam (FIB), have been extensively used to modulate the properties of nanomaterials. Moreover, ion beam techniques are regarded as a promising technique for doping and surface modification. Compared with doping during growth and diffusion, ion implantation is more controllable and reproducible. In addition, ion implantation is also an effective method for embedding nanoclusters in body materials. Moreover, ion irradiation is an effective method to modulate the morphology and surface structure of the mate rials. Therefore, via using this technique, various properties of nanomaterials can be tailored. FIB is typically used for the in situ study of ionirradiated materials. Figure 1 shows the applications of ion beam techniques for nanomaterial surface modification.Ion implantation, as an ion beam technique, has been extensively applied to the modulation of nanomaterial sur faces. Moreover, the technique has also been extensively used in the field of microelectronics. Ion implantation has replaced diffusion as a doping method to introduce dopants into the semiconductors. As an industrial technique, it exhibits high controllability and accuracy. In contrast to other doping strat egies, almost all elements can be introduced into the target materials by ion implantation and it does not introduce other impurity elements. In addition, ion implantation is not restricted by the solid solubility of elements in the mate rials. Ion implantation can be described as a collision process Nanomaterials have gained plenty of research interest because of their excellent performance, which is derived from their small size and special structure. In practical applications, to acquire nanomaterials with high performance, many methods have been used to modulate the structure and components of materials. To date, ion beam techniques have extensively been applied for modulating the performance of various nanomaterials. Energetic ion beams can modulate the surface morphology and chemical components of nanomaterials. In addition, ion beam techniques have also been used to fabricate nanomaterials, including 2D materials, nanoparticles, and nanowires. Compared with conventional metho...

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V ions implanted ZnO nanorod arrays for photoelectrochemical water splitting under visible light

Cited by 77 publications

References 37 publications

ZnO Nanorod-Arrays as Photo-(Electro)Chemical Materials: Strategies Designed to Overcome the Material's Natural Limitations

ZnO Nanorod-Arrays as Photo-(Electro)Chemical Materials: Strategies Designed to Overcome the Material's Natural Limitations

Vapor Phase Fabrication of Nanoheterostructures Based on ZnO for Photoelectrochemical Water Splitting

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

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