UVB LEDs for Medical Phototherapy

Seme, Bernd; Streit, Ingolf

doi:10.1002/phvs.201900039

Cited by 3 publications

(2 citation statements)

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“…The drawbacks of excimer lamps are their limited lifetime, the safety concerns related to application of high voltages, and high system costs. 12 Compared to the 308-nm excimer lamp, the 308-nm LED lamp has a lower cost and longer life span. The irradiation dose range is 50 mW/cm 2 -5 W/cm 2 , and these doses do not cause thermal effects or photoablation, making the 308-nm LED lamp safe during treatment.…”

Section: Discussionmentioning

confidence: 99%

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Treatment of vitiligo with 308‐nm light emitting diode: Our experience from a two‐year follow‐up of Chinese patients

Luan

et al. 2022

Photoderm Photoimm Photomed

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Section: Discussionmentioning

confidence: 99%

“…At present, a 308‐nm excimer lamp has been widely used with a xenon‐chloride gas mixture. The drawbacks of excimer lamps are their limited lifetime, the safety concerns related to application of high voltages, and high system costs 12 . Compared to the 308‐nm excimer lamp, the 308‐nm LED lamp has a lower cost and longer life span.…”

Section: Discussionmentioning

confidence: 99%

Treatment of vitiligo with 308‐nm light emitting diode: Our experience from a two‐year follow‐up of Chinese patients

Luan

et al. 2022

Photoderm Photoimm Photomed

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Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale

Bougerol

Robin

Russo

et al. 2021

ACS Appl. Mater. Interfaces

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Attaining low resistivity AlxGa1−xN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural analysis of AlxGa1−xN:Ge samples with 0 ≤ x ≤ 1, and nominal doping level in the range of 10 20 cm 3 , together with the measurement of Ge concentration and its spatial distribution down to the nm scale. AlxGa1−xN:Ge samples with x ≤ 0.2 do not present any sign of inhomogeneity. However, samples with x > 0.4 display µm-size Ge crystallites at the surface. Ge segregation is not restricted to the surface: Ge-rich regions with a size of tens of nanometers are observed inside the AlxGa1−xN:Ge layers, generally associated with Ga-rich regions around structural defects. With this local exceptions, the AlxGa1−xN:Ge matrix present an homogenous Ge composition which can be significantly lower than the nominal doping level. Precise measurements of Ge in the matrix provide a view of the solubility diagram of Ge in AlxGa1−xN as a function of the Al mole fraction. The solubility of Ge in AlN is extremely low. Between AlN and GaN, the solubility increases linearly with the Ga mole fraction in the ternary alloy, which suggests that the Ge incorporation takes place by substitution of Ga atoms only. The maximum percentage of Ga sites occupied by Ge saturates around 1%. The solubility issues and Ge segregation phenomena at different length scales likely play a role in the efficiency of Ge as n-type AlGaN dopant, even at Al concentrations where Ge DX centers are not expected to manifest. Therefore, this information can have direct impact in the performance of Ge-doped AlGaN light emitting diodes, particularly in the spectral range for disinfection ( 260 nm), which requires heavily-doped alloys with high Al mole fraction.

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UV LEDs and their applications

Milner¹

2022

The Boolean

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The purpose of this research is to design and develop a semiconductor light source emitting ultraviolet (UV) light. The final device will then be integrated into a biomedical application to assist clinicians in patient diagnosis. A light emitting diode (LED) is the specific UV source of interest, which has been the subject of major research and development over the past 20 years, with applications spanning surface disinfection to biomedical imaging. To realise the UV LED, the semiconductor structure must first be ‘grown’ which is a research area in and of itself. This project focuses specifically on taking the as-grown material of the LED and forming individual functioning devices, characterisation and then further optimisation of the growth. Challenges currently being faced include the physical constraints (electrical and optical properties) of certain materials, and extracting as much UV light as possible from the device. With 2 years left in the project, these challenges will hopefully be overcome to produce a high efficiency UV LED, integrated into a biophotonics diagnostic tool.

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UVB LEDs for Medical Phototherapy

Cited by 3 publications

References 4 publications

Treatment of vitiligo with 308‐nm light emitting diode: Our experience from a two‐year follow‐up of Chinese patients

Treatment of vitiligo with 308‐nm light emitting diode: Our experience from a two‐year follow‐up of Chinese patients

Solubility Limit of Ge Dopants in AlGaN: A Chemical and Microstructural Investigation Down to the Nanoscale

UV LEDs and their applications

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