UV-visible detector and LED based n-ZnO/p-Si heterojunction formed by electrodeposition

Abstract

In this study, we have investigated the heterojunctions formed by n-ZnO thin films deposited on (100) p-Si:B using electrochemical deposition (ECD) technique. Structural, electrical and luminescence features of the thin films were respectively measured. Optimal sets of growth conditions seem to be the ones that are undergone for the samples D1 and D2. It was observed that n-ZnO thin films have dominantly preferred orientation of (002). It has been shown that the heterostructures exhibited reasonable rectifying behavior with turn-on voltage of about 1.2 V and ideality factor of 2.1. In case of illumination with 400 nm wavelength light, significant increase occurred especially in reverse bias current by a factor of 103 and 102 for the D1 and the D2, respectively. Bandgap of ZnO thin films has been determined to be 3.4 eV at the room temperature by using the band edge photoluminescence measurements. Finally, the room temperature electroluminescence (EL) results show that the heterostructures exhibits observable broad luminescence centered at the wavelengths of 390 and 510 nm for D1 and 470 nm for D2, respectively. Additionally, sharp lasing peaks are also observed in the EL spectra, probably due to the multiple scattering effects

Ultraviolet photodetector based on heterojunction of n-ZnO microwire/p-GaN film

“…[8][9][10][11] Compared with other oxide semiconductors, ZnO-based UV photodetectors can exhibit extremely resistant to high energy proton irradiation and endure harsh radiation for much longer time, so it can be used for space applications. [8][9][10][11] Compared with other oxide semiconductors, ZnO-based UV photodetectors can exhibit extremely resistant to high energy proton irradiation and endure harsh radiation for much longer time, so it can be used for space applications.…”

“…Until now, various architectures of ZnObased UV photodetectors have been assemblied, such as the p-n junction photodiodes, [11][12][13][14][15] Schottky junction photodiodes, [16][17][18] photoconductive type. Consequently, different p-type semiconductors, such as Si, 11 NiO, 12 GaN, 13 CuSCN, 14 SiC 15 and so on, have been chosen to fabricate the p-n heterojunction UV photodetectors with ZnO architectures. Moreover, it is difficult to obtain reliable and reproducible p-type ZnO due to the low dopant solubility, the deep acceptor level and the "self-compensation" of shallow acceptors resulting from native donor defects.…”

Brush-like SnO2/ZnO hierarchical nanostructure: Synthesis, characterization and application in UV photoresponse

“…Intrigued by the novel morphology and wide band gap of the hierarchical nanostructure, the nanostructure would be used as building block for UV photodetector. 50,51 The inset of Figure 6(a) shows a schematic graph of the device based on SnO 2 /ZnO hierarchical nanostruture. Figure 6(a) demonstrates the I-V results in the dark and under UV illumination of 24 mW/cm 2 , respectively.…”

Development of High-Performance UV Detector Using Nanocrystalline Diamond Thin Film

“…Along with the development of electronics engineering and nanotechnologies, ultraviolet (UV) sensors have attained increasing attention in which their applications have flourished over the past decade, including energy, defense, spaceto-space communications, medical treatment, food processing, and water treatment. Till now, several wide-band-gap materials like GaN, Si, AlN, and ZnO compounds have been investigated for the uses in UV sensors [1][2][3][4]. Aiming at the aforementioned practical applications, however, many researches have been devoted to achieve highly efficient and highly stable operations of the device in harsh environment, leading to the quest for good performance materials and functional structures [5][6][7].…”