Nitrogen-functionalized
graphene quantum dots embedded in a polyaniline
matrix (NGQD–PANI) are extremely promising candidates for the
development of next-generation sensors and for thermoelectric materials
design with the distinct advantage of tunability of electronic properties
by controlled doping and/or by controlling the inherent disorder in
the microstructure. While their application is increasing in photovoltaics,
energy storage, and sensing technologies, a clear understanding of
conduction in these hybrid systems is lacking. Here, we report a comprehensive
study of NGQD–PANI composites with varying NGQD doping levels
over a wide range of temperature. We show distinct regimes of conduction
as a function of temperature, which include: a transition from Efros–Shklovskii
and Larkin–Khmelnitskii variable range hopping at low temperatures
to thermally driven electron transport at higher temperatures. Importantly,
we find a remarkable 50-fold enhancement in conductivity for 10% NGQD-doped
samples and tunability of the crossover temperature between different
regimes as a function of the applied voltage bias and doping. Our
work provides a general framework to understand the interplay of extrinsic
parameters like temperature and voltage bias with intrinsic material
properties like doping, which drives the electronic properties in
these hybrid systems of technological importance.