Photodetectors 2012
DOI: 10.5772/35984
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UV-Vis Photodetector with Silicon Nanoparticles

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Cited by 6 publications
(3 citation statements)
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“…PSNPs have a high absorption factor at short wavelengths, as seen in the graph. This suggests that the optical absorption is caused by a direct spectral transition [23].…”
Section: Uv-vis Spectroscopymentioning
confidence: 99%
“…PSNPs have a high absorption factor at short wavelengths, as seen in the graph. This suggests that the optical absorption is caused by a direct spectral transition [23].…”
Section: Uv-vis Spectroscopymentioning
confidence: 99%
“…Factors such as the support substrate type, silicon excess, annealing temperatures, time of thermal treatment, and composition at deposition moment and subsequent transformations are very important factors which play an important role to determine the optical properties of the SRO films. Particularly, PL of samples deposited by LPCVD also depends on the partial pressure ratio between N 2 O and SiH 4 defined as Ro = [N 2 O/SiH 4 ] and thermal annealing conditions [5].…”
Section: Band Gap Calculationsmentioning
confidence: 99%
“…On the other hand, metal-insulator-semiconductor structures with SRO as the insulator and active layer provide good results under illumination conditions [ 16 , 17 , 18 , 19 ]. In previous reports, it was found that the SRO-MIS structure exhibits an active optical response in the ultraviolet range due to the radiation emission of silicon nanocrystals (Si-ncs) formed in SRO films and the defects present in the mixed-phase nanostructure material [ 16 , 17 , 18 , 19 ]. Due to its high profitability and low cost of mass production, this material can be integrated with standard manufacturing processes in the microelectronics industry based on silicon technology.…”
Section: Introductionmentioning
confidence: 99%