UV photodetector based on graphene-GaN Schottky junction in MESFET

Gaitonde, Jaya V.; Lohani, Rajesh B.

doi:10.1109/icedss.2016.7587797

Cited by 7 publications

(3 citation statements)

References 18 publications

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“…Typical photodetectors use p–n junctions or Schottky junctions; − Schottky junction photodetectors (SJPDs) possess the advantages of high responsivity and fast response despite their simple device structure and processing. At present, most conventional SJPDs use vacuum-evaporated metal grids; , transparent conducting electrodes based on carbon nanotubes, metal nanowires, , and graphene ,,− have also been tested as Schottky contact electrodes on semiconductors. The use of graphene electrodes has advantages over other Schottky electrodes because of the build-up of optically active built-in potential over regions just beneath the electrode, without substantial loss of light absorption by the metal grid.…”

Section: Introductionmentioning

confidence: 99%

Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes

Lee

Yang

et al. 2018

ACS Appl. Mater. Interfaces

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Graphene has attracted great attention as an alternative to conventional metallic or transparent conducting electrodes. Despite its similarities with conventional electrodes, recent studies have shown that a single-atom layer of graphene possesses unique characteristics, such as a tunable work function and transparencies for electric potential, reactivity, and wetting. Nevertheless, a systematic analysis of graphene and semiconductor junction characteristics has not yet been carried out. Here, we report the photoresponse characteristics of graphene-on-GaN Schottky junction photodiodes (Gr-GaN SJPDs), showing a typical rectifying behavior and distinct photovoltaic and photoelectric responses. Following the initial abrupt response to UV illumination, the Gr-GaN SJPDs exhibited a distinct difference in photocarrier dynamics depending on the applied bias voltage, which is characterized by either a negative or positive change in photocurrent with time. We propose underlying mechanisms for the anomalous photocarrier dynamics based on the interplay between electrostatic molecular interactions over the one-atom-thick graphene and GaN junction and trapped photocarriers at the defect states in the GaN thin film.

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Section: Introductionmentioning

confidence: 99%

Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes

Lee

Yang

et al. 2018

ACS Appl. Mater. Interfaces

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“…The field effect in graphene has mainly been exploited in the applications in electronics in which graphene was used as a transistor channel of graphene fieldeffect transistors (GFETs). However, graphene also forms a Schottky junction with most of the semiconductors 5,6 , which has previously been used to realize photodetectors [7][8][9][10] , solar cells [11][12][13] , sensors 14,15 , optical modulators 16 , mixers 17 , and MESFETs with a graphene gate [18][19][20][21][22] . The ability of graphene to form a Schottky junction with semiconductors and consequently act as a gate in a MESFET, opens up a perspective of the control of the threshold voltage of FETs.…”

Section: Introductionmentioning

confidence: 99%

Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate

et al. 2022

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The threshold voltage of a field-effect transistor (FET) determines its switching and limits the scaling of the supply voltage in the logic gates. Here we demonstrate a GaAs FET with a monolayer graphene gate in which the threshold voltage was externally controlled by an additional control gate. The graphene gate forms a Schottky junction with the transistor channel, modulating the channel conductivity. The control gate sets the work function of the graphene gate, controlling the Schottky barrier height and therefore the threshold voltage, and reduces the subthreshold swing down to ~60 mV dec−1. The change of the threshold voltage was large enough to turn the initially depletion mode FETs into the enhancement mode FETs. This allowed to realize logic gates with a positive switching threshold in which the threshold voltage of each transistor was independently set. The presented FETs can also be operated as dual-gate FETs, which was demonstrated by realizing frequency mixers.

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“…Monolayer graphene has a thickness of 0.34 nm, absorbs 2.3 % = 97.7 of white light [18]; even graphene layers of 1000 nm-3000 nm thick still have transparency of approximately 70 % [19], which makes as a transparent electrode [17]. Gr/MLGr and related materials have been widely investigated for application in photodetectors [20][21][22], biological and chemical sensing [23], solar cells [10], high speed communications [24], photodiodes [25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Double-exponential current-voltage (I-V) behavior of bilayer graphene-based Schottky diode

Kutluoğlu¹,

Orhan²,

Tataroğlu³

et al. 2021

Phys. Scr.

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Researches on layered materials such as graphene have attracted lots of attention recently. It has been shown that these materials have make a junction with many semiconductor materials that behave like Schottky diodes and have rectifying characteristics. The comprehension of its fabrication process and properties are a critical need toward graphene-based integrated electronics. The purpose of this study is to find out the current-voltage (I-V) performance of Bilayer Graphene (BLGr) based heterostructure fabricated on Al 2 O 3 /p-Si, and the effect of BLGr on diode parameters. Graphene has been grown on copper (Cu) foil by Chemical Vapor Deposition (CVD) method and transferred onto Al 2 O 3 /p-Si by using the polymethyl methacrylate (PMMA) wet transfer method. Raman analysis has been performed to obtain supportive information about CVD synthesized graphene film. The I-V plot of the diode exhibited two linear regions named Region 1 (0.08-0.19 V) and Region 2 (0.21-0.40 V). The doubleexponential I-V behavior of the diode has been analyzed. The diode characteristics such as barrier height (Φ B0 ), series resistance (R s ), and ideality factor (n) have been calculated by using thermionic emission (TE), Norde, and Cheung methods. Especially, the values of the barrier height were compared with one another. It was found that they are in good agreement. Additionally, current conduction mechanisms of the diode were investigated using the forward bias ln(I) versus ln (V) plot. At lower and higher forward bias regions, the conduction mechanisms were determined as ohmic behavior and trap charge limiting current mechanism (TCLC), respectively.

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UV photodetector based on graphene-GaN Schottky junction in MESFET

Cited by 7 publications

References 18 publications

Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes

Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes

Controlling the threshold voltage of a semiconductor field-effect transistor by gating its graphene gate

Double-exponential current-voltage (I-V) behavior of bilayer graphene-based Schottky diode

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