2023
DOI: 10.3390/nano13030436
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UV-Nanoimprint and Deep Reactive Ion Etching of High Efficiency Silicon Metalenses: High Throughput at Low Cost with Excellent Resolution and Repeatability

Abstract: As metasurfaces begin to find industrial applications there is a need to develop scalable and cost-effective fabrication techniques which offer sub-100nm resolution while providing high throughput and large area patterning. Here we demonstrate the use of UV-Nanoimprint Lithography and Deep Reactive Ion Etching (Bosch and Cryogenic) towards this goal. Robust processes are described for the fabrication of silicon rectangular pillars of high pattern fidelity. To demonstrate the quality of the structures, metasurf… Show more

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Cited by 11 publications
(7 citation statements)
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“…The feasibility of using a continuous directional sputter-etch process using a low-pressure Ar plasma for the removal of the residual layers has also been demonstrated by Dirdal et al in the structuring of silicon via NIL. 10 However, in contrast to our study, they do not address the resist modification and do not report on structural modifications of the resist caused by the Ar breakthrough.…”
Section: Discussioncontrasting
confidence: 63%
See 1 more Smart Citation
“…The feasibility of using a continuous directional sputter-etch process using a low-pressure Ar plasma for the removal of the residual layers has also been demonstrated by Dirdal et al in the structuring of silicon via NIL. 10 However, in contrast to our study, they do not address the resist modification and do not report on structural modifications of the resist caused by the Ar breakthrough.…”
Section: Discussioncontrasting
confidence: 63%
“…Although some scientific papers have demonstrated the potential of NIL for optical applications very well, [8][9][10] our literature research indicates that the application of nanoimprint lithography for the fabrication of SRGs using TiO 2 has been relatively underrepresented. For this reason, we investigated the fabrication process of SRGs using TiO 2 .…”
Section: Introductionmentioning
confidence: 98%
“…This approach has been instrumental in developing nanostructures and surfaces with exceptional hydrophobic properties through refined etching techniques. 37 Additionally, it has played a crucial role in producing silicon nanostructures and trenches with high aspect ratios and controlled profiles. When it comes to making optical devices, Bosch DRIE might be the go-to choice for scenarios where swift production and cost efficiency are key, such as in silicon metalens manufacturing.…”
Section: Methodsmentioning
confidence: 99%
“…This said, it is known, that these kinds of materials tend to have a high intrinsic etch resistance making the pattern transfer difficult and challenging. Accordingly, standard UV-NIL resists, that are already proven to be suitable for pattern transfer like the mr-NIL210 [4], mr-NIL212FC [5]) of less demanding substrates need to be employed not a as single resist but in the frame of multi-layer systems in order to comply with the requirements of these applications…”
Section: Introductionmentioning
confidence: 99%