UV-light-assisted gas sensor based on PdSe₂/InSe heterojunction for ppb-level NO₂ sensing at room temperature

Abstract

The fabrication of van der Waals (vdWs) heterostructures mainly extends to two-dimensional (2D) materials. Nevertheless, current processes for obtaining high-quality 2D films are mainly exfoliated from their bulk counterparts or...

Ternary alloyed MoS2–xSex nanocomposites with a carrier mobility-dominated gas sensing mode: a superior room temperature gas sensing material for NO2 sensors

“…37 Table 1 shows the comparison of the NO 2 sensing performance of 2D material-based sensors in the literature with that of the MoS 2− x Se x -based sensors in the present work. 33,38–47 As shown, the MoS 2− x Se x −4 sensor possesses a great response and low detection limit, as well as fast response and recovery rates at room temperature.…”

Enhanced NO2 Sensitivity of Vertically Stacked van der Waals Heterostructure Gas Sensor and Its Remarkable Electric and Mechanical Tunability

“…For 9.0 ppm of NO 2 , the NO 2 selectivity ratios are 6065% and 35567% with respect to H 2 S and NH 3 , respectively. We also conducted a thorough comparison of the sensing performance of our van der Waals heterostructure gas sensors with previous existing literature − (Table ). The results clearly demonstrate that our MoS 2 /WS 2 van der Waals heterostructure gas sensors exhibit enhanced performance in lower detection limits (LOD), sensitivity, and selectivity.…”

Visible-Light-Enhanced NO2 Sensing Based on the Hybrid Orthorhombic/Monoclinic-PdSe2 Nanostructures

“…In addition, the expected structures, including heterostructures and Janus structures, have also been investigated theoretically. ,, As a rising star of this family, the orthorhombic structure of PdSe 2 is well studied and exhibits Pbca space group symmetry . The orthorhombic PdSe 2 (O-PdSe 2 ) has a puckered pentagonal structure in which each central Pd atom bonds to four Se atoms in the same layer, and two neighboring Se atoms form a covalent Se–Se bond. , In addition, O-PdSe 2 has a thickness-dependent band gap that varies from metallic (bulk) to ∼1.3 eV (monolayer), high carrier mobility, and sizeable surface-to-volume ratio, making it a promising candidate for the broadband photodetectors, field effect transistors (FETs), superconductors, and photoexcited gas sensors. − …”